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Panasonic, Corp.
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Part No. |
2SK1010-01 2SK1386-01 2SK1504-01S 2SK1510-01S 2SK1820-01S 2SK1820-01L 2SK1009-01 2SK1015-01 2SK1011-01
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Description |
Low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| mosfet的| N沟道| 450V五(巴西)直| 10A条(丁)|47VAR 晶体管| mosfet的| N沟道| 450V五(巴西)直| 18A条(丁)|47VAR transistor | mosfet | N-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-220 transistor | mosfet | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262VAR transistor | mosfet | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-252VAR Low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset transistor|mosfet|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
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File Size |
138.88K /
2 Page |
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Infineon Technologies AG SIEMENS AG SIEMENS A G
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Part No. |
BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135
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Description |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, power, mosfet, TO-220 TO-220, 3 PIN SIPMOS Small-Signal transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, power, mosfet SIPMOS Small-Signal transistor (N channel Enhancement mode Avalanche rated) 150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, mosfet, TO-92 130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, mosfet, TO-92 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, mosfet, TO-92 80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, mosfet, TO-92
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File Size |
834.65K /
6 Page |
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ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
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Part No. |
Irf637 IrfP256 IrfP257 IrfP242R Irf230R IrfP240R IrfD321R IrfF321R IrfF331R Irf333R IrfD311R Irf640R Irf232R Irf632R Irf620R IrfP250R Irf256
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Description |
transistor | mosfet | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB transistor | mosfet | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247 transistor | mosfet | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247 transistor | mosfet | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247 transistor | mosfet | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA transistor | mosfet | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR transistor | mosfet | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF transistor | mosfet | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF transistor | mosfet | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA transistor | mosfet | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR 晶体管| mosfet的| N沟道| 200伏五(巴西)直| 18A条(丁)| TO - 220AB现有 transistor | mosfet | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| mosfet的| N沟道| 200伏五(巴西)直| 8A条(丁)|04AA transistor | mosfet | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| mosfet的| N沟道| 200伏五(巴西)直| 8A条(丁)| TO - 220AB现有 transistor | mosfet | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| mosfet的| N沟道| 200伏五(巴西)直| 5A条(丁)| TO - 220AB现有 transistor | mosfet | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| mosfet的| N沟道| 200伏五(巴西)直|3A条(丁)|47 transistor | mosfet | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| mosfet的| N沟道| 275V五(巴西)直| 22A条(丁)|04AA
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File Size |
46.21K /
1 Page |
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Intersil, Corp. Intersil Corporation
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Part No. |
HUF76432P3 FN4673 HUF76432S3S HUF76432S3ST
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Description |
transistor | mosfet | N-CHANNEL | 60V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| mosfet的| N沟道| 60V的五(巴西)直|6A条(丁)|63AB Dual Differential Drivers And Receivers 16-TSSOP -40 to 85 59 A, 60 V, 0.019 ohm, N-CHANNEL, Si, power, mosfet, TO-220AB 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET power mosfet From old datasheet system
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File Size |
132.78K /
9 Page |
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it Online |
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Molex, Inc. Sanyo Electric Co., Ltd.
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Part No. |
2SK2142 2SK1884 2SK1893 2SJ269 2SK1892 2SK1885 2SK1883 2SK1894 2SD1266AO 2SK3099 2SK3100 2SK3094 2SK3096 2SJ260 2SK2407
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Description |
Low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset transistor | mosfet | N-CHANNEL | 30V V(BR)DSS | 22A I(D) | TO-220AB transistor | mosfet | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB transistor | mosfet | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220AB transistor | mosfet | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB transistor | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186 Low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| mosfet的| N沟道| 400V五(巴西)直| 9A条(丁)|20CI transistor | mosfet | N-CHANNEL | 400V V(BR)DSS | 16A I(D) | TO-220AB 晶体管| mosfet的| N沟道| 400V五(巴西)直| 16A条(丁)| TO - 220AB现有 Low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| mosfet的| N沟道| 400V五(巴西)直| 5.5AI(四)| TO - 220AB现有 Low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| mosfet的| N沟道| 400V五(巴西)直| 7A条(丁)| TO - 220AB现有 Low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| mosfet的| P通道| 60V的五(巴西)直| 8A条(丁)| TO - 220AB现有 transistor | mosfet | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-220AB
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File Size |
171.94K /
2 Page |
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it Online |
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ON Semiconductor
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Part No. |
MTD6N15 MTD6N15T4G
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Description |
power Field Effect transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, power, mosfet, TO-252 power mosfet 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, power, mosfet
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File Size |
67.60K /
6 Page |
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it Online |
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Price and Availability
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