rg-122 u pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 625 Search Time::4.953ms
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				ONSEMI[ON Semiconductor]
Part No.	MGY20N120D_D ON1930 MGY20N120D ON1929
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ...
Description	IGBT & DIODE IN TO-264 20 A @ 90 28 A @ 25 1200 VOLTS From old datasheet system Insulated Gate Bipolar Transistor with Anti-Parallel Diode
File Size	167.83K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STu11NC60 7170
OCR Text	...D = 480V, ID = 12 A, VGS = 10V, RG = 4.7 Test Conditions VDD = 300V, ID = 6 A RG = 4.7, VGS = 10V (see test circuit, Figure 3) Min. Typ. 20 ...122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 D3 D2 D1 A ...
Description	OLD PRODuCT: NOT SuITABLE FOR NEW DESIGN-IN From old datasheet system
File Size	237.72K / 8 Page	View it Online	Download Datasheet

				Microsemi, Corp. Advanced Power Technology
Part No.	APT20M22LVFR APT20M22LVFRG
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 8500 1950 560 290 66 120 16 25 48 5 10200 2730 840 435 100 180 32 50 72 1...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69...
Description	Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
File Size	66.13K / 4 Page	View it Online	Download Datasheet

				Microsemi, Corp. ADPOW[Advanced Power Technology]
Part No.	APT20M22LVR APT20M22LVRG
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 8500 1950 560 290 66 120 16 25 48 5 10200 2730 840 435 100 180 32 50 72 10 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69...
Description	Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
File Size	64.71K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFI1310N
OCR Text	...- VDD = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A) HEXFET? Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=24A)
File Size	100.77K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MGY25N120D
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
File Size	256.06K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGY25N120D
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
File Size	130.47K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MGY25N120
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ...
Description	Insulated Gate Bipolar Transistor
File Size	228.40K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	S1241 2594
OCR Text	...1 L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CuRRENT MONITOR FREE-WHEEL DIODE + Vd = 50V I L(PK) DuT DECAY TIME V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms Outline Table Conforms to JEDEC Outline TO-2...
Description	ultrafast, Soft Recovery Diode From old datasheet system
File Size	215.17K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	TDA2007 TDA2007A 1454
OCR Text	...R L = 8 PO = 100mW to 3W RL = , Rg = 10K f = 1KHz f = 10KHz f = 1KHz RL = 4, C10 = C11 = 2200F f = 1KHz Rg = 10k (o) Rg = 10k ( ) SVR Tj Sup...122 0.118 0.693 0.010 0,702 0.571 0.100 0.800 1.6 0.033 0.130 0.017 0.052 0.835 0.020 0.063 MIN. 0.1...
Description	6 6W STEREO AMPLIFIER From old datasheet system
File Size	104.38K / 7 Page	View it Online	Download Datasheet

For rg-122 u Found Datasheets File :: 625 Search Time::4.953ms
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