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rg-161 u Datasheet PDF File

For rg-161 u Found Datasheets File :: 752 Search Time::1ms
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				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10025JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 15000 1360 710 660 51 250 22 20 97 16 18000 1900 1065 990 75 375 44 40 145 3...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm
File Size	71.02K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT30M19JV APT30M19JVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 18000 3250 980 650 115 290 22 33 70 10 21600 4550 1470 975 175 435 44 66 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs POWER MOS V 300V 130A 0.019 Ohm
File Size	76.32K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT40GF120JRD
OCR Text	... = 15V I C = I C2 VCC = 0.8VCES RG = 5 I C = I C2 MIN TYP MAX uNIT 3500 490 230 320 30 200 35 130 215 145 35 90 400 140 4.5 5.0 9.5 47...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.3...
Description	The Fast IGBT⑩ is a new generation of high voltage power IGBTs
File Size	40.07K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFH20N80Q IXFK20N80Q IXFT20N80Q
OCR Text	... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS(on) = 0.42 W trr 250 ns...161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are...
Description	HiPerFETTM Power MOSFETs Q-Class
File Size	71.32K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFN39N90NBSP IXFN39N90
OCR Text	... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFN 39N90 VDSS ID25 RDS(on) = = = 900 V 39 A 0.22 D trr 250 ns G S...161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 ...
Description	HiPerFET Power MOSFETs Single MOSFET Die
File Size	123.63K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFT32N50 IXFH32N50 IXFH30N50 IXFT30N50
OCR Text	... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 30 30N50 32N50 30N50 32N50 30N50 32N50 Maximum Ratings 500 500 20 V 30 32 120 128 30 32...161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are...
Description	N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.16惟??娌??澧?己??iPerFET???MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	109.42K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXST15N120BD1 IXSH15N120BD1
OCR Text	...5C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load TJ = 125C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive TC = 25C Ma...161 IF = 30A; VGE = 0 V; TJ = 100C VR = 100 V; -diF/dt = 100 A/ms IF = 1 A; -di/dt = 200 A/ms; VR...
Description	S Series - Improved SCSOA Capability
File Size	55.40K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXGP12N60u1
OCR Text	..., 1 ms VGE = 15 V, T VJ = 125C, RG = 150 Clamped inductive load, L = 300 H TC = 25C Maximum Ratings 600 600 20 30 24 12 48 ICM = 20 @ 0....161 0.230 0.270 0.090 0.110 0.045 0.070 0.110 0.250 0.025 0.035 0.100 BSC 0.170 0.190 0.025 0.055 0....
Description	Low VCE(sat) IGBT with Diode Combi Pack IXGP12N60u1
File Size	94.50K / 6 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80
OCR Text	... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C,...161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 ...
Description	CAP,Polypropylene,60uF,10-% Tol,10 % Tol HiPerFETTM Power MOSFETs MOSFET with FAST Intrinsic Diode Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	159.97K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	JANSR2N7426u MIL-PRF-19500_655 IRHNA9260 IRHNA93260 JANSF2N7426u
OCR Text	... = -100V VDD = -100V, ID = -29A RG = 2.35 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Sou...161 0.160 -3.0 -- -200 -4.0 -2.0 -100 -- 100 -- - 25 -- 0.155 -- 0.154 -3.0 -- -- 1. Part numb...
Description	-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package RADIATION HARDENED POWER MOSFET SuRFACE MOuNT (SMD-2)
File Size	116.74K / 8 Page	View it Online	Download Datasheet

For rg-161 u Found Datasheets File :: 752 Search Time::1ms
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