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  rg-400 u Datasheet PDF File

For rg-400 u Found Datasheets File :: 7273    Search Time::1.422ms    
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    HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412
OCR Text ...ICM. 2. VCE = 360V, TJ = 125oC, RG = 50. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...400 500 600 700 TC , CASE TEMPERATuRE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V) F...
Description From old datasheet system
14A 600V uFS Series N-Channel IGBTs
14A, 600V, uFS Series N-Channel IGBTs

File Size 91.85K  /  7 Page

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    HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D
OCR Text ... VCE = VGE VGE = 25V TJ = 150oC RG = 50 VGE = 15V L = 1mH Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0....400 275 2.5 35 30 2.1 2.0 V nC nC ns ns ns ns J J V ns ns oC/W oC/W MIN 600 3.0 TYP 1.6 1.9 5...
Description 3.3V 72-mc CPLD
14A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
14A/ 600V/ uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

File Size 197.06K  /  7 Page

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    HGTD7N60C3S HGTP7N60C3 FN4141

INTERSIL[Intersil Corporation]
Part No. HGTD7N60C3S HGTP7N60C3 FN4141
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 50. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...400 275 2.1 uNITS ns ns ns ns J J oC/W Typical Performance Curves ICE, COLLECTOR TO EMITTER CuR...
Description 3.3V 72-mc CPLD
14A, 600V, uFS Series N-Channel IGBTs
14A 600V uFS Series N-Channel IGBTs
From old datasheet system

File Size 143.46K  /  7 Page

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    HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S

Fairchild Semiconductor Corporation
HARRIS[Harris Corporation]
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S
OCR Text ... VCE = VGE VGE = 25V TJ = 150oC RG = 50 VGE = 15V L = 1mH VCE(PK) = 480V VCE(PK) = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC ...400 275 2.1 V nC nC ns ns ns ns J J oC/W Current Turn-On Delay Time Current Rise Time Current...
Description 3.3V 72-mc CPLD
14A 600V uFS Series N-Channel IGBTs
14A, 600V, uFS Series N-Channel IGBTs
14A/ 600V/ uFS Series N-Channel IGBTs

File Size 153.41K  /  6 Page

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    IRF720B IRFS720B IRFS720

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF720B IRFS720B IRFS720
OCR Text ... 5) VDD = 200 V, ID = 3.3 A, RG = 25 (Note 4, 5) -------- 10 35 35 35 14 2.7 5.6 30 80 80 80 18 --- ns ns ns ns nC nC nC ...400 Coss 200 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 Crss 2 Note : ID = 3.3 A 0 -1 1...
Description 400V N-Channel MOSFET

File Size 876.47K  /  10 Page

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    IRF7303 IRF7303TR

International Rectifier
http://
Part No. IRF7303 IRF7303TR
OCR Text ...3 5.0 VDS 4.0 RD VGS RG D.u.T. + I D , Drain Current (A) - VDD 3.0 10V Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 T C , Case ...
Description Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

File Size 107.34K  /  9 Page

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    IRF7306 IRF7306TR IRF7306TRPBF

International Rectifier
Part No. IRF7306 IRF7306TR IRF7306TRPBF
OCR Text ...5V 17 --- I D = -1.8A ns 25 --- RG = 6.0 18 --- RD = 8.2, See Fig. 10 D 4.0 6.0 440 200 93 --- nH --- --- --- --- Between lead ti...400 8 200 C rss 4 0 1 10 100 A 0 0 5 10 FOR TE ST C IR C u IT S EE FIG u R E...
Description Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.78K  /  9 Page

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    IRF730APBF

IRF[International Rectifier]
Part No. IRF730APBF
OCR Text ...VDD = 200V --- ID = 3.5A ns --- RG = 12 --- R D = 57,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS ...400 300 200 100 0 TOP BOTTOM VDS L DRIVER ID 2.5A 3.5A 5.5A RG 20V D.u.T IAS ...
Description SMPS MOSFET

File Size 180.64K  /  8 Page

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    IRF730A IRF730 IRF730APBF

IRF[International Rectifier]
Part No. IRF730A IRF730 IRF730APBF
OCR Text ...VDD = 200V --- ID = 3.5A ns --- RG = 12 --- RD = 57,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS =...400 A 0 .0 1 300 Fig 12a. unclamped Inductive Test Circuit V (B R )D SS tp 200 10...
Description 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SMPS MOSFET

File Size 100.63K  /  8 Page

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    IRF730B IRFS730B IRF730

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF730B IRFS730B IRF730
OCR Text ... 5) VDD = 200 V, ID = 5.5 A, RG = 25 (Note 4, 5) -------- 15 55 85 50 25 4.3 11 40 120 180 110 33 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dra...
Description 400V N-Channel MOSFET

File Size 895.90K  /  10 Page

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For rg-400 u Found Datasheets File :: 7273    Search Time::1.422ms    
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