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PHILIPS
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| Part No. |
SAA7327H
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| OCR Text |
...E 19 22 KILL 23 Vneg Vpos LN LP RN RP SERIAL DATA (LOOPBACK) INTERFACE 35 36 SCLI WCLI SDI TIMING RAM ADDRESSER SERIAL DATA INTERFACE EBU IN...41 42 43 44 45 46 47 48 49 50(1) 51 52(1) 53 54 55 56 57(1) 58(1) 59 60 61 62 63 64 DESCRIPTION
S... |
| Description |
From old datasheet system
Digital servo processor and Compact Disc decoder with integrated DAC for video CD (CD7 II)
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| File Size |
289.92K /
68 Page |
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it Online |
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NEC, Corp.
NEC Corp.
Duracell
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| Part No. |
NE76038 NE76038-T1
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| OCR Text |
... 101 152 -166 -130 -105 -87 -75 Rn/50 0.79 0.75 0.70 0.61 0.50 0.40 0.31 0.25 0.20 0.15 0.12
Notes: 1. Operation in excess of any one of ...41 -52 -61 MAG 0.006 0.013 0.02 0.03 0.04 0.06 0.08 0.09 0.10 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.1... |
| Description |
LOW NOISE L TO Ku-BAND GaAs MESFET 低噪L降至KU波段GaAs MESFET器件
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| File Size |
39.98K /
6 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BFQ70 Q62702-F774 A0532
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| OCR Text |
...Fmin dB Gp(Fmin) dB MAG opt ANG RN N - F50 dB Gp(F50) dB
IC = 3 mA, VCE = 6 V, Z0 = 50 0.01 0.8 - (ZS = 150 ) - - 1.2 -
IC = 5 mA, ...41 - 44 - 49 - 55 - 60 - 73 - 87
S11, S22 = f (f) IC = 2 mA, VCE = 6 V, Z0 = 50
S12, S21 = f ... |
| Description |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) NPN硅射频晶体管（对于低噪音的集电极电流IF和电信系统的天线和宽带放大器2mA0mA
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
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| File Size |
338.67K /
14 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGBC20UD2
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| OCR Text |
... Ga te d rive as sp e cified Tu rn -on lo sses in clud e effe cts o f re verse rec ove ry Po we r D issipatio n = 1 3W
8
Load Current ...41 0 10 20 30 40 50
A
60
0.1 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
R G , Gate Re... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(VCES=600V, @VGE=15V, IC=6.5A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V @Vge=15V Ic=6.5A)
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| File Size |
385.33K /
8 Page |
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it Online |
Download Datasheet |
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