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Intersil, Corp. Ricoh Co., Ltd.
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Part No. |
FSGYE234R3 FSGYE234D1
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OCR Text |
...rad specifications to 100k rad (si) single event - safe operating area curve for single event effects - see immunity for let of 82mev/mg/c...sd i sd = 9a - - 1.2 v reverse recovery time t rr i sd = 9a, di sd /dt = 100a/ s - - 310 ns rever... |
Description |
TRANsiSTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 9A I(D) | SMT 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 9A条(丁)|贴片
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File Size |
113.56K /
7 Page |
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HIROSE ELECTRIC Co., Ltd.
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Part No. |
IRHQ3214
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OCR Text |
...d irhq7214 100k rads (si) 2.25 ? 1.6a irhq3214 300k rads (si) 2.25 ? 1.6a irhq4214 600k rads (si) ...sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 1.6a, v gs = 0v ? t rr reverse recovery ... |
Description |
TRANsiSTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC 晶体管| MOSFET的|阵| N沟道| 250V五(巴西)直| 1.6AI(四)| LLCC
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File Size |
125.92K /
8 Page |
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International Rectifier, Corp.
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Part No. |
JANSF2N7382 IRHY9130CM-15
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OCR Text |
...number irhy9130cm 100k rads (si) 0.30 ? -11a jansr2n7382 irhy93130cm 300k rads (si) 0.30 ? -11a jansf2n7382 features: single event eff...sd diode forward voltage ? ? -3.0 v t j = 25c, i s = - 11a, v gs = 0v ? t rr reverse recover... |
Description |
-100V 300kRad Hi-Rel single P-Channel TID Hardened MOSFET in a TO-257AA package - 100V00kRad高可靠性单P沟道MOSFET的工贸硬化在TO - 257AA封装 simple Drive Requirements
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File Size |
114.00K /
8 Page |
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it Online |
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