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  tmos v power field effect tran Datasheet PDF File

For tmos v power field effect tran Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D
Description tmos E-FET High Energy power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos power FET 3.0 AMPERES 1200 vOLTS
From old datasheet system

File Size 321.60K  /  12 Page

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    MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D
Description tmos E-FET High Energy power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
tmos power FET 2.0 AMPERES 500 vOLTS
From old datasheet system

File Size 273.51K  /  10 Page

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    INFINEON[Infineon Technologies AG]
Part No. PTF080601F PTF080601E PTF080601A PTF080601
Description LDMOS RF power field effect transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF power field effect transistor 60 W 860-960 MHz
LDMOS RF power field effect transistor 60 W/ 860-960 MHz

File Size 293.07K  /  6 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J13T
Description TOSHIBA field effect transistor Silicon P Channel MOS Type (U-MOSII)
field effect transistor Silicon P Channel MOS Type (U-MOSII) power Management Switch High Speed Switching Applications

File Size 170.34K  /  6 Page

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    ERICSSON power MODULES AB
Ericsson Microelectronics
Part No. PTF10020
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF power, MOSFET
125 Watts/ 860-960 MHz GOLDMOS field effect transistor
125 Watts, 86060 MHz GOLDMOS field effect transistor

File Size 313.64K  /  6 Page

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    IRFF130 IRFF131 IRFF132 IRFF133

General Electric Solid State
GE Solid State
Part No. IRFF130 IRFF131 IRFF132 IRFF133
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60v. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60v. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE power field-effect tranSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100v. Continuous drain current 7.0A.

File Size 161.86K  /  5 Page

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    MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D
Description tmos power FET 6.0 AMPERES 600 vOLTS 6 A, 600 v, 1.2 ohm, N-CHANNEL, Si, power, MOSFET
From old datasheet system
tmos E-FET High Energy power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate

File Size 157.34K  /  8 Page

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    MTD12N06EZL_D ON2462 MTD12N06EZL-D

ON Semiconductor
Part No. MTD12N06EZL_D ON2462 MTD12N06EZL-D
Description tmos E-FET High Energy power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos power FET 12 AMPERES 60 vOLTS

File Size 275.52K  /  10 Page

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    PTF181301 PTF181301A

INFINEON[Infineon Technologies AG]
Part No. PTF181301 PTF181301A
Description LDMOS RF power field effect transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF power field effect transistor 130 W/ 1805-1880 MHz

File Size 63.03K  /  4 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J14T
Description TOSHIBA field effect transistor Silicon P Channel MOS Type (U-MOSII)
field effect transistor Silicon P Channel MOS Type (U-MOSII) power Management Switch DC-DC Converters

File Size 174.66K  /  6 Page

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For tmos v power field effect tran Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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