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http:// ICE Components, Inc. ICE COMPONENTS INC
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Part No. |
LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3R9-RN LS4D28-120-RN LS4D28-150-RN LS4D28-2R7-RN LS4D28-4R7-RN LS4D28-1R8-RN LS4D28-181-RN
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Description |
Dual n-channel EPAD Matched Pair mosfet array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD Dual n-channel EPAD Matched Pair mosfet array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled Dual n-channel EPAD Matched Pair mosfet array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled Quad n-channel EPAD Matched Pair mosfet array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled Quad n-channel EPAD Matched Pair mosfet array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
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File Size |
199.37K /
1 Page |
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Microchip Technology, Inc.
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Part No. |
MHT8P20 MTP3N12 VN2410B
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Description |
transistor | mosfet | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-258AA transistor | mosfet | n-chanNEL | 120V V(BR)DSS | 3A I(D) | TO-220AB transistor | mosfet | n-chanNEL | 240V V(BR)DSS | 700MA I(D) | TO-39 晶体管| mosfet的| N沟道| 240伏五(巴西)直| 700mA的一d)| TO - 39封装
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File Size |
1,188.86K /
19 Page |
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ECM Electronics, Ltd. Fairchild Semiconductor, Corp.
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Part No. |
IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R IRFD321R IRFF321R IRFF331R IRF333R IRFD311R IRF640R IRF232R IRF632R IRF620R IRFP250R IRF256
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Description |
transistor | mosfet | n-chanNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB transistor | mosfet | n-chanNEL | 275V V(BR)DSS | 23A I(D) | TO-247 transistor | mosfet | n-chanNEL | 275V V(BR)DSS | 21A I(D) | TO-247 transistor | mosfet | n-chanNEL | 200V V(BR)DSS | 20A I(D) | TO-247 transistor | mosfet | n-chanNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA transistor | mosfet | n-chanNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR transistor | mosfet | n-chanNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF transistor | mosfet | n-chanNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF transistor | mosfet | n-chanNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA transistor | mosfet | n-chanNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR 晶体管| mosfet的| N沟道| 200伏五(巴西)直| 18A条(丁)| TO - 220AB现有 transistor | mosfet | n-chanNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| mosfet的| N沟道| 200伏五(巴西)直| 8A条(丁)|04AA transistor | mosfet | n-chanNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| mosfet的| N沟道| 200伏五(巴西)直| 8A条(丁)| TO - 220AB现有 transistor | mosfet | n-chanNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| mosfet的| N沟道| 200伏五(巴西)直| 5A条(丁)| TO - 220AB现有 transistor | mosfet | n-chanNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| mosfet的| N沟道| 200伏五(巴西)直|3A条(丁)|47 transistor | mosfet | n-chanNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| mosfet的| N沟道| 275V五(巴西)直| 22A条(丁)|04AA
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File Size |
46.21K /
1 Page |
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SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
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Part No. |
LB1275
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Description |
7-Unit, Darlington transistor array 7-Unit Darlington transistor array 7-Unit,Darlington transistor array(7单元达林顿晶体管阵列)
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File Size |
62.38K /
2 Page |
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Price and Availability
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