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  transistor-12a Datasheet PDF File

For transistor-12a Found Datasheets File :: 1121    Search Time::1.047ms    
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    NTE[NTE Electronics]
Part No. NTE379
OCR Text Transistor Power Amp, High Voltage, Switch Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for high-vo...12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon NPN Transistor Power Amp, High Voltage, Switch

File Size 21.64K  /  3 Page

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    BDX87B BDX87C

Inchange Semiconductor Company Limited
Part No. BDX87B BDX87C
OCR Text transistor bdx87/a/b/c description high dc current gain- : h fe...12a; i b = 120ma 3.0 v v be( sat ) base-emitter saturation voltage i c = 12a; i b = 120ma ...
Description isc Silicon NPN Darlington Power Transistor

File Size 52.06K  /  2 Page

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    BDX88 BDX88C BDX88B

Inchange Semiconductor Company Limited
Part No. BDX88 BDX88C BDX88B
OCR Text transistor bdx88/a/b/c description high dc current gain- : h fe...12a; i b = -120ma -3.0 v v be( sat ) base-emitter saturation voltage i c = -12a; i b = -120m...
Description isc Silicon PNP Darlington Power Transistor

File Size 52.01K  /  2 Page

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    2SD2083

Inchange Semiconductor Company Limited
Part No. 2SD2083
OCR Text transistor 2sd2083 description high dc current gain : h fe = 2000(min.)@ i c = 12a, v ce = 4v high collector-emitter breakdown voltage- : v (br)ceo = 120v(min) complement to type 2sb1383 applications ...
Description isc Silicon NPN Darlington Power Transistor

File Size 77.81K  /  2 Page

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    BDT64B BDT64C BDT64A

Inchange Semiconductor Company Limited
Part No. BDT64B BDT64C BDT64A
OCR Text transistor bdt64/a/b/c description collector current -i c = - 12a high dc current gain-h fe = 1000(min)@ i c = -5a complement to type bdt65/a/b/c applications des...
Description isc Silicon PNP Darlington Power Transistor

File Size 84.44K  /  2 Page

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    ELM34411AA-N

ELM Technology Corporation
Part No. ELM34411AA-N
OCR Text ...nhancement mode field effect transistor p1403evg sop-8 lead-free niko-sem 3 jan-17-2006 body diode forward voltage variation with source current and temperature 25c -v - body diode forward voltage(v) 0.6 0.1 -is - re...
Description Single P-channel MOSFET

File Size 543.82K  /  4 Page

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    NTE105

NTE[NTE Electronics]
Part No. NTE105
OCR Text Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power swi...12A Collector-Emitter Saturation Voltage Base-Emitter Voltage IC = 12A, IB = 2A VCE = 2V, IC = 5A 20...
Description Germanium PNP Transistor Audio Power Amp

File Size 22.09K  /  2 Page

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    2SD2256

Inchange Semiconductor Company Limited
Part No. 2SD2256
OCR Text ...c silicon npn darlington power transistor 2sd2256 description high dc current gain : h fe = 2000(min.)@ i c = 12a, v ce = 4v high collector-emitter breakdown voltage- : v (br)ceo = 120v(min) applic...
Description isc Silicon NPN Darlington Power Transistor

File Size 71.97K  /  2 Page

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    BUV11

Inchange Semiconductor Company Limited
Part No. BUV11
OCR Text Transistor BUV11 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 0.6V (Max.) @IC= 6A *High Switching Speed *High DC Current G...12A ;IB= 1.5A IC= 12A ;IB= 1.5A VCE= 160V; IB= 0 VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC=125 VE...
Description isc Silicon NPN Power Transistor

File Size 51.50K  /  2 Page

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    BUV24

Inchange Semiconductor Company Limited
Part No. BUV24
OCR Text Transistor BUV24 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 0.6V (Max.)@IC= 6A *High Power Dissipation *Collector-Emitte...12A ;IB= 2.4A IC= 12A ;IB= 2.4A VCE= 320V; IB= 0 VCE= VCEX;VBE= -1.5V VCE= VCEX;VBE= -1.5V;TC=125 VE...
Description isc Silicon NPN Power Transistor

File Size 51.45K  /  2 Page

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For transistor-12a Found Datasheets File :: 1121    Search Time::1.047ms    
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