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NXP Semiconductors N.V.
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| Part No. |
BUK7606-55B BUK7606-55B-15
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| OCR Text |
trenchmos standard level fet rev. 02 ? 21 june 2010 product data sheet 1. product profile 1.1 general description standard level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. thi... |
| Description |
N-channel trenchmos standard level FET 75 a, 55 V, 0.006 ohm, N-CHaNNEL, Si, POWER, MOSFET
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| File Size |
155.87K /
14 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PHB87N03LT
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| OCR Text |
trenchmos ? transistor php87n03lt, phb87n03lt logic level fet phd87n03lt features symbol quick reference data ? 'trench' technology v ...a ? low thermal resistance ? logic level compatible r ds(on) 9.5 m w (v gs = 10 v) r ds(on) ... |
| Description |
N-channel trenchmos transistor Logic level FET(N沟道trenchmos 晶体管逻辑电平场效应管)
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| File Size |
100.75K /
11 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK9520-100a
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| OCR Text |
...et) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use ...a p tot total power dissipation t mb =25c; see figure 2 - 200 w t stg storage temperature -55 175 c... |
| Description |
N-channel trenchmos logic level FET
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| File Size |
182.03K /
13 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK653R3-30C
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| OCR Text |
... plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for...a t mb =100c; v gs = 10 v; see figure 1 [3] - 100 a i dm peak drain current t mb = 25 c; pulsed; t ... |
| Description |
N-channel trenchmos intermediate level FET
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| File Size |
159.12K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK653R2-55C
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| OCR Text |
... plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for...a t mb =100c; v gs = 10 v; see figure 1 [3] - 120 a i dm peak drain current t mb =25c; t p 10 s; p... |
| Description |
N-channel trenchmos intermediate level FET
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| File Size |
164.39K /
14 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK626R2-40C BUK626R2-40C-15
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| OCR Text |
... plastic package using advanced trenchmos technology. this product has been designed and qualified to the appropriate aec q101 standard for...a p tot total power dissipation t mb =25c; see figure 2 - 128 w t stg storage temperature -55 175 c... |
| Description |
N-channel trenchmos intermediate level FET
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| File Size |
183.45K /
14 Page |
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it Online |
Download Datasheet |
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