| |
|
 |
VISAY[Vishay Siliconix]
|
| Part No. |
SI7478DP-T1-E3 SI7478DP
|
| OCR Text |
...Transconductancea Diode Forward voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr t... |
| Description |
N-Channel 60-V (D-S) MOSFET
|
| File Size |
162.54K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| Part No. |
SI4406DY SI4406DY-T1
|
| OCR Text |
...Transconductancea Diode Forward voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ... |
| Description |
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 双N沟道30 V的（副）MOSFET的肖特基二极
|
| File Size |
36.05K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| Part No. |
SI6821DQ
|
| OCR Text |
...Transconductancea Diode Forward voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55_C VDS w -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1.7... |
| Description |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
| File Size |
58.32K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
