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Maxim
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| Part No. |
MAX2323 MAX2325
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| OCR Text |
...also be used in TDMA, EDGE, and w-cdma phones.
____________________________Features
o 2.7V Operation o Dual Band, Triple Mode o Three LNA Gain Settings (Cellular) o Two LNA Gain Settings (PCS) o 18mA in Low-Gain Mode 19.5mA in Paging an... |
| Description |
Triple/Dual-Mode CDMA LNA/Mixers
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| File Size |
258.75K /
16 Page |
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Maxim
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| Part No. |
MAX5884
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| OCR Text |
..............................+37C/W Operating Temperature Range ...........................-40C to +85C Junction Temperature ....................CDMA Model Output Bandwidth REFERENCE Internal Reference Voltage Range Reference Input Compliance Ra... |
| Description |
" 3.3V, 14-Bit, 200Msps High Dynamic Performance DAC with CMOS Inputs"
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| File Size |
470.97K /
18 Page |
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it Online |
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Motorola
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| Part No. |
MHL19926
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| OCR Text |
...
MHL19926
1930-1990 MHz, 10 W, 29.4 dB RF LINEAR LDMOS AMPLIFIER
CASE 301AY-01, STYLE 1
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case T... |
| Description |
1930–1990 MHz, 10 W, 29.4 dB PCS Band RF Linear LDMOS Amplifier
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| File Size |
67.06K /
2 Page |
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it Online |
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Motorola
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| Part No. |
MRF18085ALSR3 MRF18085AR3 MRF18085A
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| OCR Text |
...GSM/GSM EDGE 1.8 - 1.88 GHz, 85 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
CASE 465-06, STYLE 1 NI-780 MRF18085A, MRF18085AR3
CASE 465A-06, STYLE 1 NI-780S MRF18085ALSR3
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Volt... |
| Description |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
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| File Size |
411.94K /
8 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF19030LSR3 MRF19030LR3
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| OCR Text |
...LR3 MRF19030LSR3
2.0 GHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1 N...CDMA Gps CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 -20 -30 -40 -50 -60 -70 -... |
| Description |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
591.35K /
8 Page |
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it Online |
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Motorola
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| Part No. |
MRF19030SR3 MRF19030R3
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| OCR Text |
...30R3 MRF19030SR3
2.0 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
CASE 465E-04, STYLE 1 NI-400 MRF19030R3
CASE 465F-04, STYLE...CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 0 8 10 2 6 4 Pout, OUTPUT POWER (WA... |
| Description |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
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| File Size |
446.17K /
8 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
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| Part No. |
MRF21125S MRF21125 MRF21125SR3
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| OCR Text |
...e Lateral MOSFETs
Designed for w-cdma base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u ... |
| Description |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
378.36K /
12 Page |
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it Online |
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