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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6E01TU
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, containers and other objects which may come into direct contact with devices should be made of anti-static materials. Thermal resistance Rth (j-a) and drain power dissipation PD var... |
| Description |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
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| File Size |
174.93K /
9 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6J07FU
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance RDS (ON) ID = -0.4 A, VGS = -4 V ID = -0.4 A, VGS = -3.3 V Input capacitance Reverse tran... |
| Description |
Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Transistor Silicon P Channel MOS Type
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| File Size |
134.48K /
5 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6J08FU
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance RDS (ON) ID = -0.65 A, VGS = -2.5 V ID = -0.65 A, VGS = -2.0 V Input capacitance Reverse ... |
| Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
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| File Size |
150.82K /
6 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6K08FU
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance RDS (ON) ID = 0.8 A, VGS = 2.5 V ID = 0.8 A, VGS = 2.0 V Input capacitance Reverse transf... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category High Speed Switching Applications
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
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| File Size |
148.36K /
6 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6K201FE
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| OCR Text |
...tic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should...resistance RDS (ON) (m)
Drain-source ON-resistance RDS (ON) (m)
150
1.8 V 100 2.5 V VGS = 4... |
| Description |
Power Management Switch Applications High Speed Switching Applications
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| File Size |
358.63K /
5 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6L05FU
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on ... |
| Description |
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
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| File Size |
193.88K /
8 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6L09FU
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance
RDS (ON)
ID = 200 mA, VGS = 4 V ID = 200 mA, VGS = 3.3 V
Input capacitance Rever... |
| Description |
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
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| File Size |
199.34K /
8 Page |
View
it Online |
Download Datasheet |
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