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  0.75-5.0v 16a Datasheet PDF File

For 0.75-5.0v 16a Found Datasheets File :: 1485    Search Time::2.328ms    
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    IRLR024Z IRLU024Z

IRF[International Rectifier]
Part No. IRLR024Z IRLU024Z
OCR Text ...in Current Max. 16 11 64 35 0.23 16 25 25 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A W W/C V mJ A mJ C PD @TC = 25C Power...75 100 125 150 175 T C , Case Temperature (C) ID = 5.0A VGS = 5.0V 2.0 ID, Drain Current (A) ...
Description AUTOMOTIVE MOSFET

File Size 213.17K  /  11 Page

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    LC863220 LC863220A LC863224 LC863224A LC863228 LC863228A LC863232 LC863216A LC863096 LC863232A

SANYO[Sanyo Semicon Device]
Part No. LC863220 LC863220A LC863224 LC863224A LC863228 LC863228A LC863232 LC863216a LC863096 LC863232A
OCR Text ... at a minimum bus cycle time of 0.424s - On-chip ROM capacity Program ROM : 32K/28K/24K/20K/16K bytes CGROM : 16K bytes - On-chip RAM capaci...75 x 0.5) - Shuttering and scrolling on each row - Simplified Graphic Display *1 Note : range depend...
Description CMOS IC
8-Bit Single Chip Microcontroller

File Size 653.20K  /  20 Page

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    IPS031G IPS032G

IRF[International Rectifier]
Part No. IPS031G IPS032G
OCR Text ...nction temperature Min. -- -0.3 -10 -- -- -- -- -- -- -- -55 -40 Max. 47 7 +10 1.4 2 15 1 1.5 4 0.5 150 150 Units V mA Test C...75 0.5 5 52 53 8.1 1.6 90 130 Max. Units Test Conditions 60 100 25 50 56 60 9.5 2 200 250 m Vin ...
Description Intelligent Power Switch 2 Channel Low Side Driver in a SO-16 Package
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH

File Size 126.83K  /  11 Page

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    IR2110L4

IRF[International Rectifier]
Part No. IR2110L4
OCR Text ...g, 10 seconds) Weight Min. -0.5 -- VS - 0.5 -0.5 -0.5 -0.5 V CC - 20 VSS - 0.5 -- -- -- -55 -55 -- Max. VS + 20 400 VB + 0.5 20 VCC + 0.5 VSS + 20 VCC + 0.5 VDD + 0.5 50 1.6 75 125 150 300 Units V V/ns W C/W C g 1.5 (typ...
Description HIGH AND LOW SIDE DRIVER

File Size 134.77K  /  14 Page

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    IR2213S

International Rectifier
Part No. IR2213S
OCR Text ... PDIP) (16 Lead SOIC) Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 VCC - 25 VSS - 0.3 -- -- -- -- -- -- -55 -- Max. 1225 VB + 0.3 VB + 0.3 25 VCC + 0.3 VSS + 25 VCC + 0.3 VDD + 0.3 50 1.6 1.25 75 100 125 150 300 Units V V/ns W...
Description HIGH POWER RECTIFIER DIODES

File Size 134.59K  /  11 Page

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    IRFB16N60L

International Rectifier
ir
Part No. IRFB16N60L
OCR Text ... Typ. Max. Units 600 --- --- 3.0 --- --- --- --- --- --- 0.39 385 --- --- --- --- --- 0.79 --- --- 460 5.0 50 2.0 100 -100 --- V m V A mA ...75 100 125 150 VDS, Drain-to-Source Voltage (V) T C , Case Temperature (C) Fig 9. ...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
TRANSISTOR,MOSFET,N-CHANNEL,

File Size 543.56K  /  9 Page

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    IRFP1405

IRF[International Rectifier]
Part No. IRFP1405
OCR Text ...t Max. 160 110 95 640 310 2.0 20 530 1060 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A Power Dissipation Linear Derating Fa...75 100 125 150 175 T C , Case Temperature (C) 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
AUTOMOTIVE MOSFET

File Size 193.56K  /  9 Page

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    IRFP140N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP140N
OCR Text ... VDSS = 100V G S RDS(on) = 0.052 ID = 33A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...75 C 1.5 10 1.0 0.5 1 4 5 6 7 V DS = 5 0V 2 0 s P U L S E W ID TH 8 9 10 A ...
Description Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)\u003d 0052欧姆,身份证\u003d 33A条)

File Size 154.20K  /  8 Page

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    IRG4PH40UD IRG4PH40UD-E

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40UD IRG4PH40UD-E
OCR Text ...ew. Max. 1200 41 21 82 82 8.0 130 20 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V W ...75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperat...
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package

File Size 217.13K  /  10 Page

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