...s -40 -50 -20 -40 -7 -20 -10 15 1.3 150 -55 to +150 Unit V
7.20.3
0.80.2
1.10.1
0.850.1 0.40.1
1.00.2
10.0 -0.
+0.3
...100 400 0.1 0.5 0.1
Forward current transfer ratio Collector to emitter saturation voltage Base t...
...3 11.00.2
5.00.2 3.2
3.20.1
2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2
A A W C C
1:Base 2:Collector 3:Emitter TOP-3 Full...100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) TC=25C IB=-400mA
2SB1154
IC -- VCE
C...
Description
FILTER PLATE 10 A, 80 V, PNP, Si, POWER TRANSISTOR Silicon PNP epitaxial planar type(For power switching)
...3 11.00.2
5.00.2 3.2
3.20.1
2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2
A A W C C
1:Base 2:Collector 3:Emitter TOP-3 Full...100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) TC=25C IB=-300mA
2SB1155
IC -- VCE
C...
Description
Silicon PNP epitaxial planar type(For power switching)
...15
2.50.2
12.60.3 7.20.3
1.10.1
Parameter Collector-base voltage (Emitter open) 2SB1172 2SB1172A
Symbol VCBO VCEO VEBO IC ICP P...100
IC/IB=10
hFE IC
104
VCE=-4V
fT I C
104
VCE=-5V f=10MHz TC=25C
Forward current tr...
...3.50.2
0 to 0.15
2.50.2
(1.0)
(1.0)
1.10.1
1.00.2
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emi...100 -100 -2 10 000 -1.5 -2 mA V V MHz s s s A
Emitter-base cutoff current (Collector open) Forwa...
1) High breakdown voltage and high current. BVCEO= -80V, IC=-1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863...100 100 25 Max. -1 -1 -0.4 390 390 Unit V V V A A V MHz MHz pF VCE=-5V, IE=50mA, f=30MHz VCE=-10V, I...
1) High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. 2) Complements the 2SD1767 / 2SD1859. !External dimensions (Units : mm)
...100 14 Max. - - - -0.5 -0.5 -0.4 390 - 20 Unit V V V A A V - MHz pF IC=-50A IC=-2mA IE=-50A VCB=-50V...
Description
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Medium power transistor