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SUTEX[Supertex, Inc] Supertex Inc
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Part No. |
SR037 SR036 SR036MG SR037SG SR036SG SR037MG
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OCR Text |
...07 50 20 24 3.63 5.50 3.63 5.50 100 Units V V V V V V Hz VSOURCE = 10V, IOUT = 15mA VSOURCE = 10V, IOUT = 15mA VSOURCE = 10V, IOUT = 30mA VSOURCE = 10V, IOUT = 30mA IGS = 100A Conditions Peak transient voltage Peak rectified AC voltage
2... |
Description |
Inductorless / Dual Output Off-Line Regulators Inductorless, Dual Output Off-Line Regulators
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File Size |
480.42K /
7 Page |
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it Online |
Download Datasheet |
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STMicro
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Part No. |
STTA3006CP STTA3006CW 4412
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OCR Text |
...Min
Typ 1.3 2
Max 1.8 1.6 100 5 1.06 177
Unit V V A mA V m
Vto rd
Test pulse :
* tp = 380 s, < 2% ** tp = 5 ms, < 2%
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS... |
Description |
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODES From old datasheet system
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File Size |
76.09K /
8 Page |
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it Online |
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STMicro
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Part No. |
STTA3006PI STTA3006P STTA6006TV2 3176
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OCR Text |
...FM(A)
0.00 0.1
1
10
100
Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt.
IRM(A) 45 40 35 30 25 20 15 10 5 0 0
dIF/dt(A... |
Description |
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE From old datasheet system
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File Size |
81.07K /
9 Page |
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it Online |
Download Datasheet |
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http:// ADPOW[Advanced Power Technology]
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Part No. |
APT1201R5B APT1201R5BVR
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OCR Text |
... Switching * Lower Leakage
* 100% Avalanche Tested * Popular TO-247 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM ...240V 12 VDS=600V 8
16
TJ =+150C 10 5
TJ =+25C
1 .5
4
50 100 150 200 250 300 350 Qg... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1200V 10A 1.500 Ohm
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File Size |
63.04K /
4 Page |
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it Online |
Download Datasheet |
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http:// ADPOW[Advanced Power Technology]
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Part No. |
APT1201R6 APT1201R6B APT1201R6BVR
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OCR Text |
... Switching * Lower Leakage
* 100% Avalanche Tested * Popular TO-247 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM ...240V
TJ =+150C 10 5
TJ =+25C
12 VDS=600V 8
1 .5
4
50 100 150 200 250 300 Qg, TOTAL... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1200V 8A 1.600 Ohm
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File Size |
62.51K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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