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  1600a Datasheet PDF File

For 1600a Found Datasheets File :: 223    Search Time::1.156ms    
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    A3L250TD.02H A3L250TD.04H

AEGIS SEMICONDUTORES LTDA
Part No. A3L250TD.02H A3L250TD.04H
OCR Text ...O TJ = 125 C, VD = VDRM , ITM = 1600a. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:250D...
Description Diode-Thyristor Modules

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    A3L25TD.02I A3L25TD.04I

AEGIS SEMICONDUTORES LTDA
Part No. A3L25TD.02I A3L25TD.04I
OCR Text ...O TJ = 125 C, VD = VDRM , ITM = 1600a. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:25DT...
Description Diode-Thyristor Modules

File Size 346.11K  /  4 Page

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    A3L40TD.02I

AEGIS SEMICONDUTORES LTDA
Part No. A3L40TD.02I
OCR Text .... TJ = 125OC, VD = VDRM , ITM = 1600a. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) tx1/2. AEGIS SEMICONDUTORES LTDA. ...
Description Diode-Thyristor Modules

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    A3L55TD.02I

AEGIS SEMICONDUTORES LTDA
Part No. A3L55TD.02I
OCR Text ...O TJ = 125 C, VD = VDRM , ITM = 1600a. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:55DT...
Description Diode-Thyristor Modules

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    APTM50DAM38CTG

Microsemi, Corp.
Microsemi Corporation
Part No. APTM50DAM38CTG
OCR Text ...A IF = 60A, VR = 300V di/dt =1600a/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V www.microsemi.com APTM50DAM38CTG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Res...
Description Boost chopper SiC FWD diode MOSFET Power Module 90 A, 500 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 293.87K  /  7 Page

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    A3L90TD.02I

AEGIS SEMICONDUTORES LTDA
Part No. A3L90TD.02I
OCR Text ...O TJ = 125 C, VD = VDRM , ITM = 1600a. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:90DT...
Description Diode-Thyristor Modules

File Size 300.70K  /  4 Page

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    A5N1500.02H A5N1500.04H A5N1500.06H A5N1500.08H

AEGIS SEMICONDUTORES LTDA
Part No. A5N1500.02H A5N1500.04H A5N1500.06H A5N1500.08H
OCR Text ...s). TJ = 125 O VD = VDRM, ITM = 1600a. Gate pulse: 20V, 20 W, C, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms - 800 16 3 150 2 2500 AEGIS SEMICONDUTORES LTDA. A5N:1500.XXH CH...
Description Phase Control Thyristors

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    APTGT150DA170

Advanced Power Technology
Part No. APTGT150DA170
OCR Text ...50A IF = 150A VR = 900V di/dt =1600a/s 150 1.8 1.9 385 490 40 64 2.2 V ns C May, 2005 APT website - http://www.advancedpower.com 2-5 APTGT150DA170 - Rev 0 APTGT150DA170 Symbol Characteristic RthJC VISOL TJ TSTG TC To...
Description Boost chopper Trench Field Stop IGBT Power Module

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    APTGT150DA170G

Microsemi Corporation
Part No. APTGT150DA170G
OCR Text ... IF = 150A VR = 900V di/dt =1600a/s C mJ www.microsemi.com APTGT150DA170G Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction te...
Description Boost chopper Trench Field Stop IGBT Power Module

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    DD350N

http://
eupec GmbH
Part No. DD350N
OCR Text ...perrverzogerungsladung iFM = 1600a 800A 400A 200A 100A 50A 1000 100 1 10 -di/dt [A/s] 100 Sperrverzogerungsladung / Recovered charge Qr = f(-di/dt) Grenzstrom Tvj = Tvjmax, vR 0,5 VRRM, vRM = 0,8 VRRM Parameter: Durchlast...
Description Rectifier Diode Module

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For 1600a Found Datasheets File :: 223    Search Time::1.156ms    
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