... (1.6mm from case) 10 lbf*in (1.color='#FF0000'>1n*m)
Units
A W W/c V mJ A mJ V/ns c
Thermal Resistance
Parameter
RJc RcS RJA Junction-to-case case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
---- ---- ----
Typ.
---- 0.24 ----
...
Description
Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A) 功率MOSFET(减振钢板基本\u003d00V,的Rdson)\u003d 0.30ohm,身份证\u003d 16A条)
...0 3.8 -55 to + 150 10 lbf*in (1.color='#FF0000'>1n*m) 230 (Time above 183 c should not exceed 100s)
Units
A W W/c V V/ns c
c
Typical SMPS Topologies: l Full Bridge l PFc Boost www.irf.com
Notes through are on page 8
1
01/17/01
IRFP460...
Description
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)最大值\u003d 0.27ohm,身份证\u003d 20A条) Power MOSFET(Vdss=500V Rds(on)max=0.27ohm Id=20A) 500V Single N-channel HEXFET Power MOSFET in a SMD-247 package
...(1.6mm from case ) 10 lbf*in (1.color='#FF0000'>1n*m)
Units
A W W/c V V/ns c
Typical SMPS Topologies:
l l
Full Bridge PFc Boost
Notes
through are on page 8
www.irf.com
1
6/23/99
IRFP460A
Static @ TJ = 25c (unless otherwise spe...
Description
500V Single N-channel HEXFET Power MOSFET in a TO-247Ac package Power MOSFET(Vdss=500V Rds(on)max=0.27ohm Id=20A) Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)最大值\u003d 0.27ohm,身份证\u003d 20A条)
... (1.6mm from case) 10 lbf*in (1.color='#FF0000'>1n*m)
Units
A W W/c V mJ A mJ V/ns c
Thermal Resistance
Parameter
RJc RcS RJA Junction-to-case case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
---- ----
Typ.
---- 0.24 ----
Ma...
...(1.6mm from case ) 10 lbf*in (1.color='#FF0000'>1n*m)
Units
A W W/c V V/ns c
Typical SMPS Topologies:
l l
Full Bridge PFc Boost
Notes
through are on page 8
www.irf.com
1
05/22/01
IRFP460N
Static @ TJ = 25c (unless otherwise sp...
Description
Power MOSFET(Vdss=500V, Rds(on)max=0.24ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)最大值\u003d 0.24ohm,身份证\u003d 20A条) 500V Single N-channel HEXFET Power MOSFET in a TO-247Ac package
...(1.6mm from case ) 10 lbf*in (1.color='#FF0000'>1n*m) 230 (Time above 183 c should not exceed 100s)
Absolute Maximum Ratings
Parameter
ID @ Tc = 25c ID @ Tc = 100c IDM PD @Tc = 25c VGS EAS IAR EAR dv/dt TJ TSTG continuous Drain current, VGS @ 10V cont...
Description
500V Single N-channel HEXFET Power MOSFET in a TO-247Ac package Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
...- A
1m 100 10 1 100 n 10 n color='#FF0000'>1n
IZ - Zener current - A
RD3.3MW
1m 100 10 1 100 n 10 n RD13MW
RD3.3MW
RD5.1MW RD4.7MW RD3...c) 19 20
IZ - Zener current - A
RD22MW RD24MW RD27MW RD30MW
1m 100 10 1 100 n 10 n color='#FF0000'>1n 0 1...
Description
ZENER DIODES 200 mW 3-PIN MINI MOLD surface mount silicon Zener diodes 表面贴装硅稳压二极管 cA-BAYONET