20 a silicon carbide rectifier pdf Datasheet P13 Description --- IC-ON-LINE


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20 a silicon carbide rectifier Datasheet PDF File

For 20 a silicon carbide rectifier Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |

				INFINEON[Infineon Technologies aG]
Part No.	Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S30SMD
Description	silicon Carbide Schottky Diodes - 2x10a diode in TO263 package silicon Carbide Schottky Diodes - 2x10a diode in TO220-3 package From old datasheet system
File Size	204.92K / 8 Page	View it Online	Download Datasheet

				RECTRON LTD Rectron Semiconductor
Part No.	FM305B FM306B FM303B FM302B FM304B FM301B FM302B-W FM304B-W
Description	3 a, 200 V, silicon, rectifier DIODE, DO-214aa 3 a, 400 V, silicon, rectifier DIODE, DO-214aa 3 a, 100 V, silicon, rectifier DIODE, DO-214aa SURFaCE MOUNT GLaSS PaSSIVaTED silicon rectifier VOLTaGE RaNGE 50 to 1000 Volts CURRENT 3.0 amperes 3 a, 50 V, silicon, rectifier DIODE, DO-214aa 3 a, 600 V, silicon, rectifier DIODE, DO-214aa
File Size	25.60K / 3 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd.
Part No.	IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180DR-G02PBF IR180DR-G10PBF IR150DR-G12PBF IR150DR-G01PBF IR480DR-G02
Description	25 a, 600 V, silicon, rectifier DIODE 16 a, 800 V, silicon, rectifier DIODE 16 a, 400 V, silicon, rectifier DIODE 25 a, 200 V, silicon, rectifier DIODE 25 a, 1000 V, silicon, rectifier DIODE 16 a, 1200 V, silicon, rectifier DIODE 16 a, 100 V, silicon, rectifier DIODE
File Size	21.25K / 1 Page	View it Online	Download Datasheet


Part No.	1N2282 1N1185a 1N1612 1N3055 1N4510 1N3573R 1N1581R 1N2029 1N2027 1N2374 1N4528 1N4046R
Description	35 a, 300 V, silicon, rectifier DIODE, DO-5 40 a, 150 V, silicon, rectifier DIODE, DO-5 5 a, 50 V, silicon, rectifier DIODE, DO-4 0.125 a, silicon, SIGNaL DIODE 12 a, 1000 V, silicon, rectifier DIODE, DO-4 3.5 a, 500 V, silicon, rectifier DIODE, DO-4 3 a, 50 V, silicon, rectifier DIODE, DO-4 1 a, 400 V, silicon, SIGNaL DIODE, DO-4 1 a, 200 V, silicon, SIGNaL DIODE, DO-4 0.8 a, silicon, SIGNaL DIODE 35 a, 800 V, silicon, rectifier DIODE, DO-5 275 a, 150 V, silicon, rectifier DIODE, DO-9
File Size	398.48K / 4 Page	View it Online	Download Datasheet

				RECTRON LTD Rectron Semiconductor
Part No.	EFM202L EFM201L EFM203L EFM204L EFM205L EFM206L EFM207L
Description	2 a, 150 V, silicon, rectifier DIODE 2 a, 300 V, silicon, rectifier DIODE SURFaCE MOUNT GLaSS PaSSIVaTED SUPER FaST silicon rectifier VOLTaGE RaNGE 50 to 600 Volts CURRENT 2.0 ampere 2 a, 100 V, silicon, rectifier DIODE
File Size	425.00K / 5 Page	View it Online	Download Datasheet

				MICROSEMI CORP-LaWRENCE Microsemi, Corp. MICROSEMI[Microsemi Corporation]
Part No.	1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232a 1N2232 1N1582 1N1065 1N2244a 1N2244 1N1616a 1N1615a 1N1613a 1N1613 1N2230a 1N2230 1N2238a 1N2238 1N2242a 1N2242 1N2240a 1N2240 1N2228a 1N2228 1N1612a 1N1612 1N1583 1N1581 1N2493 1N1341C 1N1069 1N1342a 1N1584 1N2497 S2080 1N1066 1N1067 1N1341a 1N1342B 1N1342C 1N1343a 1N1343B 1N1343C 1N1344a 1N1344B 1N1344C 1N1345a 1N1345B 1N1345C 1N1346a 1N1346B 1N1346C 1N1347a 1N1347B 1N1347C 1N1348a 1N1348B 1N1348C 1N1586 1N1614 1N1614a 1N1615 1N1616 1N2234 1N2234a 1N2236 1N2236a 1N2491 1N2492 1N2494 1N2495 1N2496 S20100 S20120 S2020 S2040 S2060 1N1347 1N1612R 1N1613R 1N1614R 1N1615R 1N1616R
Description	silicon POWER rectifier 16 a, 600 V, silicon, rectifier DIODE, DO-203aa silicon POWER rectifier 16 a, 150 V, silicon, rectifier DIODE, DO-203aa silicon POWER rectifier 16 a, 100 V, silicon, rectifier DIODE, DO-203aa silicon POWER rectifier 16 a, 300 V, silicon, rectifier DIODE, DO-203aa silicon POWER rectifier 16 a, 50 V, silicon, rectifier DIODE, DO-203aa Standard rectifier (trr more than 500ns) N/a silicon POWER rectifier
File Size	136.86K / 2 Page	View it Online	Download Datasheet

				WESTCODE SEMICONDUCTORS LTD
Part No.	SM30CXC614 SM30CXC624 SM14CXC170 SM02CXC190 SM02CXC170 XC724 SM26CXC915
Description	1160 a, 3000 V, silicon, rectifier DIODE 1106 a, 3000 V, silicon, rectifier DIODE 440 a, 1400 V, silicon, rectifier DIODE 760 a, 200 V, silicon, rectifier DIODE 440 a, 200 V, silicon, rectifier DIODE 940 a, 2000 V, silicon, rectifier DIODE 1610 a, 2600 V, silicon, rectifier DIODE
File Size	215.57K / 2 Page	View it Online	Download Datasheet

				Infineon
Part No.	SDP10S30 SDB10S30SMD SDT10S30
Description	silicon Carbide Schottky Diodes - 10a diode in TO220-3 package silicon Carbide Schottky Diodes - 10a diode in TO263 package silicon Carbide Schottky Diodes - 10a diode in TO220-2 package
File Size	575.47K / 9 Page	View it Online	Download Datasheet

				RECTRON LTD Rectron Semiconductor
Part No.	RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M-10
Description	8 a, 50 V, silicon, BRIDGE rectifier DIODE SINGLE-PHaSE GLaSS PaSSIVaTED silicon BRIDGE rectifier VOLTaGE RaNGE 50 to 1000 Volts CURRENT 8.0 amperes 8 a, 400 V, silicon, BRIDGE rectifier DIODE 8 a, 600 V, silicon, BRIDGE rectifier DIODE 8 a, 800 V, silicon, BRIDGE rectifier DIODE
File Size	167.35K / 6 Page	View it Online	Download Datasheet

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

For 20 a silicon carbide rectifier Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |

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