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  200s Datasheet PDF File

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    E3X-NT11-M1J0.3M E3X-NVG212M

Omron Electronics LLC
Part No. E3X-NT11-M1J0.3M E3X-NVG212M
OCR Text ...ave none have Operate or reset: 200s max. Operate or reset: Super-high-speed mode: 200s max. 80s for operation and reset respectively high-speed mode: 250s for operation and reset respectively Standard mode: 1 ms for operation and reset re...
Description
File Size 515.17K  /  9 Page

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    BYW98-100S BYW98-150S BYW98-200S BYW98-50S

EIC discrete Semiconductors
Part No. BYW98-100S BYW98-150S BYW98-200s BYW98-50S
OCR Text 200s PRV : 50 ~ 200 Volts Io : 3 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free SU...
Description SUPER FAST RECOVERY DIODES

File Size 42.38K  /  2 Page

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    LTC3127EDD LTC3127EDDPBF LTC3127EDDTRPBF LTC3127EMSEPBF LTC3127EMSETRPBF LTC3127-15

Linear Technology
Part No. LTC3127EDD LTC3127EDDPBF LTC3127EDDTRPBF LTC3127EMSEPBF LTC3127EMSETRPBF LTC3127-15
OCR Text ...D 175 VOUT = 5V IL 1A/DIV 200s/DIV 3127 G14 125 1.8 2.4 3 3.6 VIN (V) 0 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6 VIN (V) 5 5.4 3127 G13 VIN = 3.6V VOUT = 3.3V RPROG = 90k COUT = 4.4mF R3 = 499k C1 = 100pF 31...
Description 1A Buck-Boost DC/DC Converter with Programmable Input Current Limit

File Size 362.57K  /  20 Page

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    AP7361 AP7361-10FGE-7 AP7361-25FGE-7 AP7361-15FGE-7

Diodes Incorporated
Diodes, Inc.
Part No. AP7361 AP7361-10FGE-7 AP7361-25FGE-7 AP7361-15FGE-7
OCR Text ...A to 500mA (200mA/div) Time (200s/div) Load Transient Response VIN=VEN=4.3V CIN=1F,COUT=4.7F Time (200s/div) Load Transient Response VIN=VEN=4.3V CIN=1F,COUT=4.7F VOUT=3.3V (20mV/div) VOUT=3.3V (20mV/div) IOUT=50mA to 100mA...
Description 1A LOW DROPOUT ADJUSTABLE AND FIXED-MODE REGULATOR WITH ENABLE
1 V FIXED POSITIVE LDO REGULATOR, PDSO8 3 X 3 MM, GREEN, DFN-8
2.5 V FIXED POSITIVE LDO REGULATOR, 0.7 V DROPOUT, PDSO8 3 X 3 MM, GREEN, DFN-8
1.5 V FIXED POSITIVE LDO REGULATOR, PDSO8 3 X 3 MM, GREEN, DFN-8

File Size 316.86K  /  15 Page

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    MAX6882ETE MAX6883ETE

Maxim Integrated Products
Part No. MAX6882ETE MAX6883ETE
OCR Text ... 3: The total DELAY is tDELAY = 200s + (500k x CDELAY). Leave DELAY unconnected for 200s delay. The total TIMEOUT is tTIMEOUT = 200s + (500k x CTIMEOUT). Leave TIMEOUT unconnected for 200s timeout. Note 4: A current IS = 25A 10% is generate...
Description Dual-/Triple-Voltage, Power-Supply Sequencers/Supervisors

File Size 423.36K  /  19 Page

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    MAX767C/D

Maxim Integrated Products, Inc.
Part No. MAX767C/D
OCR Text ...V OUTPUT 50mV/div AC-COUPLED 200s/div 200s/div 5A CIRCUIT LOAD-TRANSIENT RESPONSE 7A CIRCUIT LOAD-TRANSIENT RESPONSE 5A LOAD CURRENT 0A 7A LOAD CURRENT 0A 3.3V OUTPUT 50mV/div AC-COUPLED 3.3V OUTPUT 50mV/div AC-COUPL...
Description CONNECTOR ACCESSORY
5V-to-3.3V, Synchronous, Step-Down Power-Supply Controller

File Size 194.25K  /  20 Page

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    K1S3216B1C K1S3216B1C-I

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K1S3216B1C K1S3216B1C-I
OCR Text ...er(Vcc min.=1.7V) for a minimum 200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Min) VCC Min. 200s CS1 CS2 Power Up Mode POWER UP(1) Normal Operation 1. After VCC...
Description 2Mx16 bit Uni-Transistor Random Access Memory

File Size 179.11K  /  10 Page

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    K1S32161CC K1S32161CC-FI70 K1S32161CC-I

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K1S32161CC K1S32161CC-FI70 K1S32161CC-I
OCR Text ...er(Vcc min.=2.7V) for a minimum 200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Min) VCC Min. 200s CS1 CS2 Power Up Mode POWER UP(1) Normal Operation 1. After VCC...
Description 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

File Size 184.44K  /  10 Page

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    K1S321611C K1S321611C-FI70 K1S321611C-I

Samsung Semiconductor Co., Ltd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K1S321611C K1S321611C-FI70 K1S321611C-I
OCR Text ...er(Vcc min.=2.7V) for a minimum 200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Min) VCC Min. 200s CS1 CS2 Power Up Mode POWER UP(1) Normal Operation 1. After VCC...
Description 2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器

File Size 178.12K  /  10 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K9F2808U0C-XIB0 K9F2808U0C-FCB0 K9F2808U0C-FIB0 K9F2816U0C-PCB0 K9F2808Q0C-HIB0 K9F2808U0C-HIB0 K9F2816Q0C-HIB0 K9F2816U0C-HIB0 K9F2808U0C-P K9F2808U0C-PIB0 K9F2808Q0C-HCB0 K9F2808U0C-HCB0 K9F2808U0C-V K9F2808U0C-Y K9F2808U0C-XCB0 K9F2816U0C-PIB0 K9F2816U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0
OCR Text ...ite Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable CMOS Floating-Gate Technology - End...
Description INTERNAL SNGL-DRV LOOP CABLE C
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
DB50 MALE/ DB50 MALE 2FT 1,600 × 8位NAND闪存

File Size 674.89K  /  31 Page

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