64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns Multi-Chip Package memory 64M Bit 4Mx16 Four Bank NOR flash memory / 32M Bit 2Mx16 UtRAM
32 Megabit (2 M x 16-Bit) CMOS 1.8 volt-only, Simultaneous Operation, Page Mode flash memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM SPECIALTY memory CIRCUIT, PBGA73
(2M x 8-bit/1M x 16-bit) MirrorBit Boot Sector flash memory (Advance Information) 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 volt-only Boot Sector flash memory From old datasheet system
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 volt-only, Simultaneous Operation flash memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY memory CIRCUIT, PBGA73 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 volt-only, Simultaneous Operation flash memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业闪存兆位56亩16位),静态存储器
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 volt-only, Simultaneous Read/Write flash memory 64兆位米8 4米x 16位).0伏的CMOS只,同步写闪 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 volt-only, Simultaneous Read/Write flash memory 4M X 16 flash 3v PROM, 70 ns, PBGA63
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 volt-only Boot Sector flash memory 256K X 16 flash 5v PROM, 70 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 volt-only Boot Sector flash memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪