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  3.9a 2.5a Datasheet PDF File

For 3.9a 2.5a Found Datasheets File :: 2294    Search Time::2.766ms    
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    ENA1011

Sanyo Semicon Device
Part No. ENA1011
OCR Text ...0.5 4.8 8 Ratings min 24 1 10 1.3 typ max Unit V A A V S Marking : TA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd...9A VDS=10V, VGS=10V, ID=9A VDS=10V, VGS=10V, ID=9A IS=9A, VGS=0V Ratings min 9 9 9.2 10.5 typ 13 13....
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 50.32K  /  4 Page

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    AP09N70R-A-HF AP09N70R-A-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP09N70R-A-HF AP09N70R-A-HF-14
OCR Text ...atic drain-source on-resistance 3 v gs =10v, i d =4.5a - - 0.75 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forwa...9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 94.45K  /  4 Page

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    AP09N70P-A08

Advanced Power Electronics Corp.
Part No. AP09N70P-A08
OCR Text ...atic drain-source on-resistance 3 v gs =10v, i d =4.5a - - 0.75 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forwa...9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 117.41K  /  5 Page

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    PA12A PA12

Cirrus Logic
Part No. PA12A PA12
OCR Text ...0WRMS POWERRATING 8-PINTO-3 PACKAGESTYLECE DESCRIPTION The PA12 is a state of the art high voltage, very high output current opera...9A 35V .87A 3.7A 30V 1.5A 4.1A 25V 2.4A 4.9A 20V 2.9A 6.3A 15V 4.2A 8.0A These simplified limits may...
Description POWER OPERATIONAL AMPLIFIERS

File Size 280.32K  /  5 Page

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    Fairchild Semiconductor Corporation
Part No. IRLR/U230A
OCR Text ...y dv/dt (3) total power dissipation (t a =25 c) total power dissipation (t c =25 c) linear derating factor ...9a, di/dt 220a/ m s, v dd bv dss , starting t j =25 c pulse test: pulse width = 250 m s, ...
Description Advanced Power MOSFET

File Size 228.67K  /  7 Page

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    FDP10N50F FDPF10N50FT

Fairchild Semiconductor
Part No. FDP10N50F FDPF10N50FT
OCR Text ... (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 125 42 w - derate above 25 o c1.00.33w/ o c t j , t stg ope...9a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 9a di f /dt = 100a/ s ...
Description N-Channel MOSFET 500V, 9A, 0.85Ω

File Size 404.88K  /  9 Page

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    FCD9N60NTM

Fairchild Semiconductor
Part No. FCD9N60NTM
OCR Text ... 9.3 mj dv/dt mosfet dv/dt ruggedness 100 v/ns peak diode recovery dv/dt ...9a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 9a di f /dt = 100a/ s - 322 - ns q rr...
Description N-Channel SupreMOSMOSFET 600V, 9A, 385m
N-Channel MOSFET

File Size 726.13K  /  8 Page

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    2SC5517

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5517
OCR Text ... 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passi...9A IC = 4.5A, IB = 0.9A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 4.5A, IB1 = 0.9A, IB2 = -1.8A IF = 4.5...
Description Silicon NPN triple diffusion mesa type(For horizontal deflection output)

File Size 33.40K  /  2 Page

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    G2996 G2996P1U G2996P1UF G2996F1U G2996F1UF

GMT
Global Mixed-mode Technology Inc
Part No. G2996 G2996P1U G2996P1UF G2996F1U G2996F1UF
OCR Text ... JEDEC SSTL-18 ,SSTL-2 and SSTL-3 (Series Stub Termination Logic) specifications for termination of DDR-SDRAM. It contains a high-speed oper...9A continuous current and transient peaks up to 3A/1.8A in the application as required for DDRI/II-S...
Description DDR I/II Termination Regulator

File Size 278.97K  /  13 Page

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