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  30.0-36.0 Datasheet PDF File

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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text ....8 3.8 6 8.3 1.2 0.1 50 230 340 30 40 1.0 9.7 9.4 9.6 9.4 -- -- 3.3 6.8 10 13.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.7 3.6 5.7 7.9 1.5 0.1 250 500 600 60 70 10 -- -- -- -- -- A -- V A V V Test Conditions V...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text ....8 3.8 6 8.3 1.2 0.1 50 230 340 30 40 1.0 9.7 9.4 9.6 9.4 -- -- 3.3 6.8 10 13.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.7 3.6 5.7 7.9 1.5 0.1 250 500 600 60 70 10 -- -- -- -- -- A -- V A V V Test Conditions V...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text ...5 2.5 -- 6.0 1.2 0.1 50 230 340 30 40 1.0 9.7 9.4 9.6 V 9.4 -- -- A VO = 0V, VIN = VDD PW 10 s VO = 15V, VIN = 0V PW 10 s A V IO = 0A IO = 0A VB=VS = 500V/600V VIN = 0V or VDD VIN = 0V or VDD VIN = 0V or VDD VIN = VDD VIN = 0V www.irf....
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...20V 93 ID = 60A 29 nC VDS = 32V 30 VGS = 10V, See Fig. 6 and 13 --- VDD = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ... Air Operation - - 1.0 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISM TEST CONDITIONS Modified MOSFET Symbol Showing the I...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...0 70 65 40 55 55 50 45 40 40 35 30 70 70 70 70 65 65 65 60 60 55 55 50 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 7.96...0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 SELFRES. FREQ. MIN. (MHz) 32...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ... RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 2.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.028 2.3 ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...t Typ. --- --- Max. 460 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Dio...0.88 --- 0.82 --- 50 --- 61 --- 48 --- 65 Conditions MOSFET symbol showing the G integral reverse...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text ... 500V 21A 0.27 29.9 (1.177) 30.4 (1.197) Pin 1 - Gate 16.64 (0.655) 17.15 (0.675) Pin 2 - Source Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain - Source ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...N t : TJ = 2 oC oe 5 00 .0 0 15 30 45 6 0 10 0 @Nts: oe 1 VGS = 0 V . 2 2 0 s P l e T s .5 us et 08 . 10 . 12 . 14 . 16 . 18 . 20 . 22 . 1 5 oC 7 2 oC 5 1 -1 0 04 . 06 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] F...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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