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				NEC
Part No.	2SD1615A 2SD1615
OCR Text	...o 270 GL GP 200 to 400 GK 300 to 600 2.5 0.1 (c) 1985 2SD1615, 2SD1615A TYPICAL CHARACTERISTICS (TA = 25 C) SAFE OPERATING AREA (TRANSIENT THERMAL RESISTANCE METHOD) 5 1 pulse 2 TOTAL POWER DISSIPATION vs. AMBIENT TE...
Description	NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD
File Size	54.52K / 5 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	BF996S BF996SA BF996SB
OCR Text	...-2.00 ID/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 ANG deg -8.5 -17.7 -24.6 -32.1 -39.2 -45.8 -5...
Description	N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system
File Size	132.03K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE5520279A-T1 NE5520279A
OCR Text	... f = 2.00 GHz VDS = 5.0 V IDQ = 300 mA 2500 OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE 40 Ids(mA) 2500 Ids(mA) Pout 2000 Drain Efciency, d (%) Power Added Efciency, add (%) Output Power, Pout (dBm) ...
Description	NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
File Size	163.74K / 7 Page	View it Online	Download Datasheet

				California Eastern Laboratories ETC[ETC]
Part No.	NE650103M
OCR Text	...1.050 1.100 1.150 1.200 1.250 1.300 1.350 1.400 1.450 1.500 1.550 1.600 1.650 1.700 1.750 1.800 1.850 1.900 1.950 2.000 2.050 2.100 2.150 2.200 2.250 2.300 2.350 2.400 2.450 2.500 2.550 2.600 2.650 2.700 2.750 2.800 2.850 2.900 2.950 3.000 ...
Description	NECS 10 W L & S-BAND POWER GaAs MESFET
File Size	133.22K / 6 Page	View it Online	Download Datasheet

				NEC[NEC] ETC
Part No.	NE6501077
OCR Text	...S11 GHz MAG 0.050 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.010 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 ...
Description	10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
File Size	36.45K / 6 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE678M04-T2 NE678M04
OCR Text	...ransfer Capacitance Cre (pF) 300 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 f= 1 MHz Total Power Dissipation Pout (mW) 250 205 200 150 100 50 0 25 50 75 100 125 150 Ambient Temperature TA ...
Description	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 中功率NPN硅高频晶体管
File Size	60.03K / 7 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text	...1.169 1.168 1.204 1.249 1.278 1.300 1.357 1.432 1.515 1.612 1.648 1.703 1.806 1.926 2.045 2.120 2.118 2.110 2.033 1.924 1.815 1.685 1.625 1.568 1.481 1.406 1.326 1.215 1.163 1.104 0.983 0.868 0.784 0.703 0.676 0.643 0.599 0.561 ANG 149.4 97...
Description	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
File Size	47.52K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	NE960R275 NE960R200 NE960R2 NE961R200
OCR Text	... Total 2 wires, 1 per bond pad, 300 m long each wire. Drain : Total 2 wires, 1 per bond pad, 300 m long each wire. Source : No bond wires. Wire : 25 m diameter, gold. Preliminary Data Sheet P13775EJ2V0DS00 5 NE960R2 SERIES [NE961R...
Description	0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管 0.2 W X Ku-BAND POWER GaAs MES FET
File Size	60.83K / 12 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE960R575 NE960R500 NE960R5 NE961R500 NE962R575
OCR Text	...URRENT AND GAIN vs. INPUT POWER 300 12 Drain Current ID (mA) 250 10 200 8 150 6 100 5 10 15 Input Power Pin (dBm) 20 25 4 GATE CURRENT vs. INPUT POWER 1.5 Gate Current Ig (mA) 1.0 0.5 0.0 0.5 5 1...
Description	0.5 W X, Ku-BAND POWER GaAs MES FET 0.5 W X Ku-BAND POWER GaAs MES FET
File Size	60.15K / 12 Page	View it Online	Download Datasheet

				http:// CATALYST[Catalyst Semiconductor] Vishay Intertechnology, Inc. BCD Semiconductor Manufacturing, Ltd. NXP Semiconductors N.V. Motorola Mobility Holdings, Inc. Cooper Bussmann, Inc. Microchip Technology, Inc.
Part No.	CAT24FC65GLI-TE13 CAT24FC66ZD2I-TE13 CAT24FC65 CAT24FC65GLA-1.8TE13 CAT24FC65GLA-TE13 CAT24FC65GLE-1.8TE13 CAT24FC65GLE-TE13 CAT24FC65GLI-1.8TE13 CAT24FC65GWA-1.8TE13 CAT24FC65GWA-TE13 CAT24FC65GWE-1.8TE13 CAT24FC65GWE-TE13 CAT24FC65GWI-1.8TE13 CAT24FC65GWI-TE13 CAT24FC65GXA-TE13 CAT24FC65GXE-1.8TE13 CAT24FC65GXE-TE13 CAT24FC65GXI-1.8TE13 CAT24FC65GXI-TE13 CAT24FC65GYA-1.8TE13 CAT24FC65GYA-TE13 CAT24FC65GYE-1.8TE13 CAT24FC65GYE-TE13 CAT24FC65GYI-1.8TE13 CAT24FC65GYI-TE13 CAT24FC65JA-1.8TE13 CAT24FC65JA-TE13 CAT24FC65JE-1.8TE13 CAT24FC65JE-TE13 CAT24FC65JI-1.8TE13 CAT24FC65JI-TE13 CAT24FC65KA-1.8TE13 CAT24FC65KA-TE13 CAT24FC65KE-1.8TE13 CAT24FC65KE-TE13 CAT24FC65KI-1.8TE13 CAT24FC65KI-TE13 CAT24FC65LA-1.8TE13 CAT24FC65LA-TE13 CAT24FC65LE-1.8TE13 CAT24FC65LE-TE13 CAT24FC65LI-1.8TE13 CAT24FC65LI-TE13 CAT24FC65PA-1.8TE13 CAT24FC65PA-TE13 CAT24FC65PE-1.8TE13 CAT24FC65PE-TE13 CAT24FC65PI-1.8TE13 CAT24FC65PI-TE13 CAT24FC65RD2A-1.8TE13 CAT24FC65RD2A-TE13 CAT24FC65RD2E-1.8TE13 CAT24FC65RD2E-TE13 CAT24FC65RD2I-1.8TE13 CAT24FC65RD2I-TE13 CAT24FC65UA-1.8TE13 CAT24FC65UA-TE13 CAT24FC65UE-1.8TE13 CAT24FC65UE-TE13 CAT24FC65UI-1.8TE13 CAT24FC65UI-TE13 CAT24FC65WA-1.8TE13 CAT24FC65WA-TE13 CAT24FC65
OCR Text	... 50 1300 600 1300 600 600 0 100 300 300 Max 400 900 Units kHz ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns ns Power-Up Timing (2)(3) Symb...GL: PDIP (Lead-free, Halogen-free, NiPdAu lead plating) GW: SOIC, JEDEC (Lead-free, Halogen-free, Ni...
Description	LM5105 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10 LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay; Package: LLP; No of Pins: 10 Silver Mica Capacitor; Capacitance:1300pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:Yes RoHS Compliant: Yes CONNECTOR ACCESSORY 连接器附 64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护 LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护 Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:14S; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Socket; Gender:Female 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护 LM5107 100V / 1.4A Peak Half Bridge Gate Driver; Package: SOIC NARROW; No of Pins: 8 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护 LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: MINI SOIC; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护 WASHER & NUT KIT for PDB181 MODEL 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
File Size	443.01K / 10 Page	View it Online	Download Datasheet

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