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  5.25.8ghz Datasheet PDF File

For 5.25.8ghz Found Datasheets File :: 781    Search Time::4.172ms    
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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP182R Q62702-F1601
OCR Text ...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1...25 0.19281 0.75 1.11 300 fA fA V fF V eV K 0.039478 A 0.071955 mA All parameters are ready...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP182W Q62702-F1502
OCR Text ...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1...25 0.19281 0.75 1.11 300 fA fA V fF V eV K 0.039478 A 0.071955 mA All parameters are ready...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 59.09K  /  7 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP182 Q62702-F1396
OCR Text ...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1...25 0.19281 0.75 1.11 300 fA fA V fF V eV K 0.039478 A 0.071955 mA All parameters are ready...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 60.21K  /  7 Page

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    Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
Part No. MAX3275 MAX3275-MAX3277 MAX3277
OCR Text ...0 15 10 40 34 500 140 (Notes 3, 5) (Note 5) 2 1 510 42.5 600 50 15 15 7 3.3 690 57.5 40 31 16 3.8 k Ap-p mVp-p ps dB dB psp-p 40 185 245 275...25 2.7 2.3 65 1.0 MAX 41 3.3 2.7 UNITS mA GHz kHz V 2 _______________________________________...
Description Low-Noise.Fibre Channel Transimpedance Amplifiers
" Low-Noise, Fibre Channel Transimpedance Amplifiers"
From old datasheet system

File Size 1,271.92K  /  9 Page

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    BFR360L307

Infineon Technologies AG
Part No. BFR360L307
OCR Text ...iers ? for oscillators up to 3.5 ghz and pout > 10 dbm ? low noise figure: 1.0 db at 1.8 ghz ? pb-free (rohs compliant) package 1) ? qua...25 30 ma 40 i c -5 0 5 10 15 20 dbm 30 ip 3 6v 4v 3v 2v 1v transition frequency f t = ? ( i...
Description NPN Silicon RF Transistor

File Size 75.75K  /  9 Page

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    TriQuint Semiconductor,Inc.
Part No. TGA2921-SG
OCR Text ...dbm nominal p1db @ 8v 800ma ? 2.5% evm at 26 dbm output power ? imd3 -50dbc @ 24dbm scl, typical ? bias conditions: 7-9 v @ 700-800 ma (qui...25 30 35 40 14 16 18 20 22 24 26 28 30 pin (dbm) pout (dbm) & gain (db) 0 200 400 600 800 1000 1200 ...
Description 4 Watt 802.11a Packaged Amplifier

File Size 327.25K  /  12 Page

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    Infineon
Part No. BFP640
OCR Text ... 1 ma, i b = 0 v (br)ceo 4 4.5 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 30 a collector-base cutoff curre...25 c cb bfp640 mar-01-2004 6 third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50...
Description Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA

File Size 271.06K  /  8 Page

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    BFP620F07 BFP620FH7764 BFP620F

Infineon Technologies AG
Infineon Technologies A...
Part No. BFP620F07 BFP620FH7764 BFP620F
OCR Text ...llector-emitter voltage v ces 7.5 collector-base voltage v cbo 7.5 emitter-base voltage v ebo 1.2 collector current i c 80 ma base current i...25 - dbm 1db compression point at output i c = 50 ma, v ce = 2 v, z s = z l =50 ? , f = 1 ...
Description C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
   NPN Silicon Germanium RF Transistor

File Size 151.03K  /  10 Page

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    FLU35ZMNBSP FLU35ZM

List of Unclassifed Manufacturers
ETC
Part No. FLU35ZMNBSP FLU35ZM
OCR Text ... VDS VGS PT Tstg Tch Rating 15 -5 20.8 -55 to +150 175 Unit V V W o o C C RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) ...25 Total Pow e r Dis s ipatio [W] 20 38 Output Power [dB m] 36 34 32 30 28 26 24 40 80 Power Adde...
Description L-Band Medium & High Power GaAs FET
From old datasheet system

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    ISL37231DRAZ-TS ISL37231DRAZ-T7

Intersil Corporation
Part No. ISL37231DRAZ-TS ISL37231DRAZ-T7
OCR Text ...avdd1 b2, r1, r2, r3, r4 (note 5) 1.0v analog supply voltage. the use of parallel 100pf and 10nf decoupling capacitors to ground is recom...25, 2013 absolute maximum rating s thermal information supply voltage (v dd to gnd, 1.0v rails) . ....
Description 10.3125 Gb/s Retiming Dual-Channel Transceiver

File Size 232.42K  /  9 Page

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