...
Value 30 200 300 600 200 500 -65 to +125
Unit V mA mA mA mW C/W C
Electrical Characteristics @ TA = 25C unless otherwise specified
Characteristic Reverse Breakdown Voltage (Note 1) Symbol V(BR)R Min 30 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3...
Description
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
...iagrams Below & Page 2
A1
0.65 Nominal
G H K
J K L M a
J
D
F
L
All Dimensions in mm
AC
1
C2
C2
C1
A2
A2
C2
A2
AC
1
C1
C2
C1
C2
C3
C1
C1
A2
A1
A1
C2
A1
...
... Tj Tstg
Symbol RthJS
Value 65 80 80 6 100 200 250 150 -65 ... 150
Unit V
mA mW C
Value
Unit
140
K/W
1
Aug-30-2002
BCM846S
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol V...
... 4 20 TO-218 ISOWATT218 125 55 -65 to 150 -65 to 150 150 150 V V V V A A A A A W C o C
o
Unit
V CER V CES VCEO V EBO IC I CM I CP IB ...80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1
MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.2...
Description
HIGH POWER NPN SILICON TRANSISTORS RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 24V; Power: 1W; Pot-Core Transformer - separated HIGH POWER NPN SILICON TRANSISTORS