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Renesas Electronics Corporation |
Part No. |
ISL70023SEHMX
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Description |
100V, 60A Enhancement Mode GaN Power Transistor
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Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
Part No. |
ISL70024SEHMX
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Description |
200V, 7.5A Enhancement Mode GaN Power Transistor
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Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
Part No. |
ISL70023SEHML
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Description |
100V, 60A Enhancement Mode GaN Power Transistor
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Tech specs |
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Official Product Page
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NXP Semiconductors N.V.
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Part No. |
2N7002T
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Description |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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File Size |
71.32K /
12 Page |
View
it Online |
Download Datasheet |
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Bom2Buy.com
Price and Availability
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