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TN5122 D1555 AD9154 8107A MAF08006 AP992 CHD250 6KE200A
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  cesat Datasheet PDF File

For cesat Found Datasheets File :: 3351    Search Time::1.453ms    
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    Infineon
Part No. G25H1203
OCR Text ...lossesachievable ?verylowv cesat ?lowemi ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infi...
Description High speed IGBT

File Size 2,324.10K  /  16 Page

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    BCR151L3

INFINEON TECHNOLOGIES AG
Part No. BCR151L3
OCR Text ... i c = 5 ma, i b = 0.25 ma v cesat - - 0.3 v input off voltage i c = 100 a, v ce = 5 v v i(off) 0.5 - 1.8 input on voltage i c = 1 ma, v ce = 0.3 v v i(on) 1 - 3 input resistor r 1 70 100 130 k ? resistor ratio r 1 / r 2 0.9 1 1....
Description 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 202.11K  /  11 Page

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Part No. SMBTA1407
OCR Text ...i c = 100 ma, i b = 0.1 ma v cesat - - 1.5 v base emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 2 ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 20 mhz f t 125 - - mhz collector-bas...
Description NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage

File Size 66.73K  /  6 Page

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Part No. BC856S
OCR Text ... i c = 100 ma, i b = 5 ma v cesat - - 75 250 300 650 mv base emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 850 - - - base-emitter voltage 1) i c = 2 ma, v ce =...
Description PNP Silicon AF Transistor Arrays

File Size 841.24K  /  10 Page

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    BUL128D

Inchange Semiconductor Company Limited
Part No. BUL128D
OCR Text ... i e =10ma; i c =0 9 v cesat-1 collector-emitter saturation voltage i c =0.5a ;i b =0.1a 0.7 v v cesat-2 collector-emitter saturation voltage i c =1a ;i b =0.2a 1.0 v v cesat-3 collector-emitter saturation voltage i c =...
Description Silicon NPN Power Transistors

File Size 57.64K  /  3 Page

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    SKIIP232GDL120-410CTVE

SEMIKRON INTERNATIONAL
Part No. SKIIP232GDL120-410CTVE
OCR Text ... r t t j = 125 c -- 10,5 m w v cesat i c = 175a, t j = 125 c -- 3,2 v v cesat i c = 175a, t j = 25 c -- 3,05 v e on + e off v cc =600/900v,i c =200a t j = 125 c -- 60/98 mj c chc per skiip, ac side - 1,4 - nf l ce top, bottom - 15 - ...
Description 250 A HALF BRIDGE BASED PRPHL DRVR, XMA

File Size 29.14K  /  2 Page

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    BUL6825

Inchange Semiconductor Company Limited
Part No. BUL6825
OCR Text ...e i c =10ma ;i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.2a 0.5 v v cesat-2 collector-emitter saturation voltage i c =2a ;i b =0.5a t c =100 ?? 0.6 1.0 v v cesat-3 collector-emitter satu...
Description Silicon NPN Power Transistors

File Size 38.26K  /  3 Page

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    PM50B4L1C060

Mitsubishi Electric Semiconductor
Part No. PM50B4L1C060
OCR Text ...ax. unit t j =25c - 2.2 2.7 v cesat collector-emitter saturation voltage v d =15v, i c =50a v cin =0v, pulsed (fig. 1) t j =125c - 2.2 2.7 v v ec emitter-collector voltage i e =50a, v d =15v, v cin = 15v ...
Description INTELLIGENT POWER MODULES

File Size 320.00K  /  10 Page

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