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  commutating Datasheet PDF File

For commutating Found Datasheets File :: 2388    Search Time::2.312ms    
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    Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
Part No. BCR16B BCR16C BCR16E
OCR Text ...tical-rate of rise of off-state commutating voltage ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. electrical cha...
Description MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

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    NXP Semiconductors N.V.
Part No. ACTT6X-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure 15 3.5--a/ms v d =400v; t j = 125 c; i t(rms) =6a; dv...
Description AC Thyristor Triac power switch

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    NXP Semiconductors N.V.
Part No. ACTT6G-800E
OCR Text .../s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure 15 3.5--a/ms v d =400v; t j = 125 c; i t(rms) =6a; ...
Description AC Thyristor Triac power switch

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    NXP Semiconductors N.V.
Part No. ACTT6B-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure 15 3.5--a/ms v d =400v; t j = 125 c; i t(rms) =6a; dv...
Description AC Thyristor Triac power switch

File Size 143.64K  /  14 Page

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    NXP Semiconductors N.V.
Part No. ACTT6-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure 15 3.5--a/ms v d =400v; t j = 125 c; i t(rms) =6a; dv...
Description AC Thyristor Triac power switch

File Size 148.14K  /  14 Page

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    MMFT3055EL

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MMFT3055EL
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT-223 package which is designed for medium power surface m...
Description MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS

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    MMFT3055E

MOTOROLA[Motorola, Inc]
Part No. MMFT3055E
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT-223 package which is designed for medium power surface m...
Description MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

File Size 238.13K  /  10 Page

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    NXP Semiconductors N.V.
Part No. ACTT2X-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =2a; dv com /dt = 10 v/s; gate open circuit; see figure 14 ; see figure 15 3--a/ms v cl clamping voltage i cl = 0.1 ma; t p =1ms; t j = 25 c 850 - - v ...
Description AC Thyristor Triac power switch

File Size 179.18K  /  14 Page

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    NXP Semiconductors N.V.
Part No. ACTT2S-800E
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =2a; dv com /dt = 10 v/s; gate open circuit; see figure 14 ; see figure 15 3--a/ms v cl clamping voltage i cl = 0.1 ma; t p =1ms; t j = 25 c 850 - - v ...
Description AC Thyristor Triac power switch

File Size 847.21K  /  15 Page

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    NXP Semiconductors N.V.
Part No. ACT108W-600D
OCR Text ...s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =1a; dv com /dt = 15 v/s; gate open circuit; see figure 15 ; see figure 16 0.15 - - a/ms v cl clamping voltage i cl = 100 a; t p =1ms; t j 125 c; see...
Description AC Thyristor power switch

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For commutating Found Datasheets File :: 2388    Search Time::2.312ms    
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