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  ddr333 Datasheet PDF File

For ddr333 Found Datasheets File :: 655    Search Time::1.422ms    
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    HYB25D512160BC-6 HYB25D512800BC-6

Qimonda AG
Part No. HYB25D512160BC-6 HYB25D512800BC-6
OCR Text ...00bt?6 4 2.5-3-3 166 2-3-3 133 ddr333 hyb25d512800bt?6 8 hyb25d512160bt?6 16 hyb25d512160btl?6 16 hyb25d512400bt?7 4 143 ddr266 hyb25d512400bc?5 4 3.0-3-3 200 2.5-3-3 166 ddr400b p-tfbga-60 hyb25d512800bc?5 8 hyb25d512160bc?5 16 hyb...
Description 512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60

File Size 1,274.23K  /  37 Page

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    K4H510838B-NC/LA2 K4H510838B-NC/LB0 K4H510838B-NC/LB3 K4H510838B-NC/LCC K4H510838B-VC/LCC K4H510838B-VC/LB3 K4H510838B-V

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H510838B-NC/LA2 K4H510838B-NC/LB0 K4H510838B-NC/LB3 K4H510838B-NC/LCC K4H510838B-VC/LCC K4H510838B-VC/LB3 K4H510838B-VC/LA2 K4H510838B-VC/LB0 K4H510838B-N
OCR Text ...latency : DDR266(2, 2.5 Clock), ddr333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O tra...
Description 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 512MB的乙芯片DDR SDRAM内存规格54 sTSOP -Ⅱ(400mil x 441mil

File Size 346.41K  /  24 Page

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    Samsung Electronic
Part No. M368L3223CTL
OCR Text ...vision 0.1 (nov. 2001) 1. added ddr333 function 2. updated ddr333 test specification 3. deleted typical current in idd spec. table 4. included address and control input setup/hold time(tis/tih) at slow slew rate in ddr200/266 ac specificati...
Description 32Mx64 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet

File Size 94.43K  /  16 Page

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    46V16M16

Micron Technology
Part No. 46V16M16
OCR Text ddr333 SDRAM Addendum DOUBLE DATA RATE (DDR) SDRAM FEATURES * 167 MHz Clock, 333 Mb/s/p data rate * VDD = +2.5V 0.2V, VDDQ = +2.5V 0.2V * Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data ca...
Description Search --To MT46V16M16

File Size 181.96K  /  8 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H1G0438M-TC_LB0 K4H1G0438M-TC_LB3 K4H1G0838M-TC_LA2 K4H1G0838M-TC_LB0 K4H1G0438M-TC/LB0 K4H1G0838M-TC/LB0 K4H1G0438M-TC/LA2 K4H1G0438M-TC/LB3 K4H1G0838M-TC/LA2 K4H1G0838M-TC/LB3
OCR Text ...ion 0.4 (October, 2003) - Added ddr333 and x16 IDD current spec. Revision 0.5 (November, 2003) - Modified IDD2N current spec. Revision 0.6 (February, 2004) - Complete DC current spec. Revision 1.0 (October, 2004) - Deleted x16 option. - Fin...
Description 1Gb M-die DDR SDRAM Specification

File Size 203.73K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H1G0838M-ULB3 K4H1G0438M-LA2 K4H1G0438M-LB0 K4H1G0438M-LB3 K4H1G0438M-UC K4H1G0438M-UC_LA2 K4H1G0438M-UC_LB0 K4H1G0438M-UC_LB3 K4H1G0438M-UC0 K4H1G0438M-UC2 K4H1G0438M-UC3 K4H1G0438M-UCA2 K4H1G0438M-UCB0 K4H1G0438M-UCB3 K4H1G0438M-ULA2 K4H1G0438M-ULB0 K4H1G0438M-ULB3 K4H1G0838M-LA2 K4H1G0838M-LB0 K4H1G0838M-LB3 K4H1G0838M-UC_LA2 K4H1G0838M-UC_LB0 K4H1G0838M-UC_LB3 K4H1G0838M-UC0 K4H1G0838M-UC2 K4H1G0838M-UC3 K4H1G0838M-UCA2 K4H1G0838M-UCB0 K4H1G0838M-UCB3 K4H1G0838M-ULA2 K4H1G0838M-ULB0
OCR Text ... x 8 256M x 4 Org. Max Freq. B3(ddr333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) B3(ddr333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) SSTL2 66pin TSOP II Interface Package Operating Frequencies B3(ddr333@CL=2.5) Speed @CL2 Speed @CL2.5 *...
Description 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

File Size 203.93K  /  23 Page

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    K4H511638G

Samsung semiconductor
Part No. K4H511638G
OCR Text ...ad latency : DDR266(2.5 Clock), ddr333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O tra...
Description 512Mb G-die DDR SDRAM Specification

File Size 394.04K  /  24 Page

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    K4H511638F

Samsung semiconductor
Part No. K4H511638F
OCR Text ...ad latency : DDR266(2.5 Clock), ddr333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O tra...
Description 512Mb F-die DDR SDRAM Specification

File Size 397.07K  /  24 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H510838B-VC_LCC K4H510838B-N K4H510838B-NC_LA2 K4H510838B-NC_LB0 K4H510838B-NC_LB3 K4H510838B-NC_LCC K4H510838B-VC_LA2 K4H510838B-VC_LB0 K4H510838B-VC_LB3
OCR Text ...latency : DDR266(2, 2.5 Clock), ddr333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O tra...
Description 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)

File Size 341.67K  /  24 Page

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    K4H511638D K4H510438D

Samsung semiconductor
Part No. K4H511638D K4H510438D
OCR Text ... Corrected typo ( tQHS=0.55 for ddr333@CL=2.5 is JEDEC standard for TSOP(II)) - Revised overshoot/undershoot specification following JEDEC SPEC - Added tPDEX on AC parameter specification History DDR SDRAM Rev. 1.2 January 2006 K4...
Description (K4H51xx38D) 512Mb D-die DDR SDRAM Specification

File Size 387.39K  /  24 Page

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For ddr333 Found Datasheets File :: 655    Search Time::1.422ms    
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