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  electrostatic discharge noise Datasheet PDF File

For electrostatic discharge noise Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    DF3A6.8FV

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.8FV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 138.77K  /  3 Page

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    DF3A6.2FV

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2FV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 125.43K  /  3 Page

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    DF3A6.2LFV

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 116.64K  /  3 Page

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    DF2S6.8S

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S6.8S
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 114.83K  /  3 Page

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    DF3A8.2FE DF5A3.3JE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2FE DF5A3.3JE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.30 to 2.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.10 to 2.40; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD)

File Size 159.89K  /  3 Page

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    C1206C102KARECAUTO

Kemet Corporation
Part No. C1206C102KARECAUTO
Description ESD SMD Auto X7R, Ceramic, Electro Static discharge, 1000 pF, 10%, 250 V, X7R, SMD, MLCC, Temperature Stable, Electro Static discharge, Automotive Grade, 1206

File Size 50.34K  /  1 Page

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    C1206C102KAGECAUTO

Kemet Corporation
Part No. C1206C102KAGECAUTO
Description ESD SMD Auto C0G, Ceramic, Electro Static discharge, 1000 pF, 10%, 250 V, C0G, SMD, MLCC, Temperature Stable, Electro Static discharge, Automotive Grade, 1206

File Size 49.98K  /  1 Page

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    C1206X104K3GECAUTO

Kemet Corporation
Part No. C1206X104K3GECAUTO
Description ESD SMD Auto C0G, Ceramic, Electro Static discharge, 0.1 uF, 10%, 25 V, C0G, SMD, MLCC, Temperature Stable, Electro Static discharge, Automotive Grade, 1206

File Size 50.43K  /  1 Page

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    RICOH electronics devic...
Ricoh Co., Ltd.
Part No. R1140Q R1140Q151D-TL R1140Q281D-TL R1140Q151D-TR R1140Q301B-TL R1140Q301B-TR R1140Q301D-TL R1140Q301D-TR R1140Q151B-TR R1140Q281B R1140Q401B-TL R1140Q401D-TL R1140Q151B-TL R1140Q281B-TL R1140Q401B-TR R1140Q281B-TR R1140Q381D-TL R1140Q381D-TR R1140Q381B-TR R1140Q381B-TL
Description 120mA LDO regulator IC. Output voltage 3.8V. Mask option without auto discharge function at OFF state. Taping type TL.
120mA LDO regulator IC. Output voltage 3.8V. Mask option with auto discharge function at OFF state. Taping type TL.
CAPACITOR, CASE S, 1UF, 35V; Application:Solid; Capacitance:1uF; Tolerance, capacitance:10%; Series:TAJ; Voltage, rating:35V; Capacitor dielectric type:Tantalum Electrolytic; Case style:S; Current, leakage:0.5uA; Depth, RoHS Compliant: Yes
SC82 120mA LDO REGULATOR 1.5 V FIXED POSITIVE LDO REGULATOR, 0.7 V DROPOUT, PDSO4
120mA LDO regulator IC. Output voltage 3.0V. Mask option without auto discharge function at OFF state. Taping type TL.
120mA LDO regulator IC. Output voltage 3.0V. Mask option without auto discharge function at OFF state. Standard taping type TR.
120mA LDO regulator IC. Output voltage 3.0V. Mask option with auto discharge function at OFF state. Taping type TL.
120mA LDO regulator IC. Output voltage 3.0V. Mask option with auto discharge function at OFF state. Standard taping type TR.
120mA LDO regulator IC. Output voltage 3.8V. Mask option with auto discharge function at OFF state. Standard taping type TR.
120mA LDO regulator IC. Output voltage 3.8V. Mask option without auto discharge function at OFF state. Standard taping type TR.

File Size 182.72K  /  18 Page

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    HEF4011BT HEF4011BT-653

NXP Semiconductors
Part No. HEF4011BT HEF4011BT-653
Description Inputs and outputs are protected against electrostatic effects

File Size 267.18K  /  12 Page

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For electrostatic discharge noise Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

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