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EPCOS[EPCOS]
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| Part No. |
C61157-A7-A131 B39182-B7844-K410 B7844
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| OCR Text |
...e Input Power at GSM850, GSM900 gsm1800, GSM1900 Tx bands
T Tstg VDC VESD PIN PIN
- 20 / + 75 - 40 / + 85 5 50* 15 12
C C V V dBm dBm
Machine Model, 10 pulses peak power of GSM signal, duty cycle 4:8
* - acc. to JESD22-A115A ... |
| Description |
Low-Loss Filter for Mobile Communication
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| File Size |
86.06K /
6 Page |
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it Online |
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EPCOS[EPCOS]
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| Part No. |
C61157-A8-A1 B39941B9423K610 B9423
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| OCR Text |
...e Input Power at GSM850, GSM900 gsm1800, GSM1900 Tx bands
1)
-30/+85 -40/+85 5 100 1) 15 15
C C V V dBm dBm machine model, 10 pulses effective power in the on-state duty cycle 4:8
Tstg VDC VESD PIN PIN
acc. to JESD22-A115A (mac... |
| Description |
Low-Loss Filter for Mobile Communication
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| File Size |
74.23K /
8 Page |
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it Online |
Download Datasheet |
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EPCOS[EPCOS]
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| Part No. |
B39182-B7652-G210 B7652
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| OCR Text |
... Input power at GSM850, GSM900, gsm1800, GSM1900 Tx bands: Filter 1 (EGSM-Rx) Filter 2 (PCN-Rx)
T Tstg VDC VESD
- 20 / + 70 - 40 / + 85 5 50
C C V V
PIN PIN
15 12
dBm dBm
peak power of GSM signal, duty cycle 4:8
2
... |
| Description |
SAW Components Low-Loss Dual Band Filter for Mobile Communication 942,5 / 1842,5 MHz
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| File Size |
84.24K /
9 Page |
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it Online |
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http://
MACOM[Tyco Electronics]
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| Part No. |
MAFRIN0036 MAFRIN0034 MAFRIN0035
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| OCR Text |
...less Telecommunication Systems: gsm1800, PCS1900, UMTS2100 (3G) High performance at low cost in a miniaturized package. Small size, 1" Vs. industry standard of 2" Low mass, less than 18 grams vs. industry standard of greater than 36.0 grams... |
| Description |
Miniature Surface Mount Dual Isolators
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| File Size |
112.29K /
2 Page |
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it Online |
Download Datasheet |
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MACOM[Tyco Electronics]
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| Part No. |
MAFRIN0205 MAFRIN0203 MAFRIN0204
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| OCR Text |
...less Telecommunication Systems: gsm1800, PCS1900, UMTS2100 (3G) High performance at low cost in a miniaturized package. Small size, 0.6" Vs. industry standard of 1" Low Mass, less than 9.0 grams vs. industry standard of greater than 18.0 gr... |
| Description |
Miniature Surface Mount Isolators
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| File Size |
109.90K /
2 Page |
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it Online |
Download Datasheet |
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NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
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| Part No. |
NE5510179A-T1 NE5510179A
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| OCR Text |
...sion driver amplifier for 3.5 V gsm1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power wi... |
| Description |
3.5V的操作硅射频功率MOSFET1.9 GHz的输电功
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
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| File Size |
38.35K /
4 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NE664M04-T2-A NE664M04
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| OCR Text |
...
26 dBm
NE664M04
DCS1800 (gsm1800) Cellular Phone f = 1.8 GHz
R55
R57
A
3 9Z 00 1
5 dBm
16 dBm
25 dBm
35 dBm
NE678M04
NE664M04
NE5520379A (MOS FET)
Cordless Phone f = 0.9 GHz
TH
R57
n3 dBm
... |
| Description |
MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR
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| File Size |
195.30K /
10 Page |
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it Online |
Download Datasheet |
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NEC Corp.
NEC[NEC]
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| Part No. |
NE664M04-T2 NE664M04
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| OCR Text |
...
26 dBm
NE664M04
DCS1800 (gsm1800) Cellular Phone f = 1.8 GHz
A 3 9Z 00 1
R55
R57
5 dBm
16 dBm
25 dBm
35 dBm
NE678M04
NE664M04
NE5520379A (MOS FET)
Cordless Phone f = 0.9 GHz
TH
R57
n3 dBm
9 ... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
126.05K /
9 Page |
View
it Online |
Download Datasheet |
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