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  h-bridge-25 Datasheet PDF File

For h-bridge-25 Found Datasheets File :: 8478    Search Time::1.515ms    
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    ZXCW8100

ETC[ETC]
Part No. ZXCW8100
OCR Text ...a a FET drive interface with an H-bridge output stage, forms a full solution to Digital Power Amplification. Reference designs are available for the solutions with typical power levels up to 60W. The ZXCW8100 device operates from a 3.3V sup...
Description 32 BIT STEREO DIRECT DRIVE DIGITAL AUDIO AMPLIFIER

File Size 448.04K  /  24 Page

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    AWL08G AWL10G AWL005G AWL01G AWL02G AWL04G AWL06G

EIC discrete Semiconduc...
EIC[EIC discrete Semiconductors]
Electronics Industry Public Company Limited
Part No. AWL08G AWL10G AWL005G AWL01G AWL02G AWL04G AWL06G
OCR Text ...(max.) IF(AV) IFSM I2t VF IR IR(H) CJ RJA TJ TSTG AWL AWL 005G 01G 50 100 35 70 50 100 100 150 550 600 AWL 02G 200 140 200 250 700 AWL 04G 400 280 400 450 900 1.0 AWL 06G 600 420 600 700 1150 AWL 08G 800 560 800 900 1350 A...
Description    AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS
AB 15C 15#16 PIN PLUG

File Size 17.30K  /  2 Page

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    CM100DY-28H

POWEREX[Powerex Power Semiconductors]
Part No. CM100DY-28H
OCR Text H-Series Module 100 Amperes/1400 Volts A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P - DIA. (2 TYP...bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel d...
Description Dual IGBTMOD 100 Amperes/1400 Volts

File Size 67.61K  /  4 Page

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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text H-Series Module 150 Amperes/1400 Volts A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P - DIA. (2 TYP...bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel d...
Description Dual IGBTMOD 150 Amperes/1400 Volts

File Size 69.57K  /  4 Page

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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text ...) R TAB#110 t=0.5 L E H M Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected ...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.59K  /  4 Page

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text ...- M6 THD. (3 TYP) N K K G H TAB #110, t = 0.5 Q N K E J N Description: Mitsubishi IGBT Modules are designed for use in swi...bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel ...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.35K  /  4 Page

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text ...YP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a r...
Description IGBT Modules:1400V
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 48.00K  /  4 Page

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text ...YP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a r...
Description HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V

File Size 47.54K  /  4 Page

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    CWR06 CWR06CB155J CWR06CB155K CWR06CB155M CWR06CC155J CWR06CC155K CWR06CC155M CWR06CH155J CWR06CH155K CWR06CH155M CWR06D

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. CWR06 CWR06CB155J CWR06CB155K CWR06CB155M CWR06CC155J CWR06CC155K CWR06CC155M CWR06CH155J CWR06CH155K CWR06CH155M CWR06DB155J CWR06DB155K CWR06DB155M CWR06DC155J CWR06DC155K CWR06DC155M CWR06DH155J CWR06DH155K CWR06DH155M CWR06FB155J CWR06FB155K CWR06FB155M CWR06FC155J CWR06FC155K CWR06FC155M CWR06FH155J CWR06FH155K CWR06FH155M CWR06HB155J CWR06HB155K CWR06HB155M CWR06HC155J CWR06HC155K CWR06HC155M CWR06HH155J CWR06HH155K CWR06HH155M CWR06JB155J CWR06JB155K CWR06JB155M CWR06JC155J CWR06JC155K CWR06JC155M CWR06JH155J CWR06JH155K CWR06JH155M CWR06KB155J CWR06KB155K CWR06KB155M CWR06KC155J CWR06KC155K CWR06KC155M CWR06KH155J CWR06KH155K CWR06KH155M CWR06MB155J CWR06MB155K CWR06MB155M CWR06MC155J CWR06MC155K CWR06MC155M CWR06MH155J CWR06MH155K CWR06MH155M CWR06NB155J CWR06NB155K CWR06NB155M CWR06NC155J CWR06NC155K CWR06NC155M CWR06NH155J CWR06NH155K CWR06NH155M WR06DH155J WR06CB155M WR06CH155M
OCR Text ...TION FINISH B = Gold. Standard. H = Solder Plate. C = Solder Dipped 155 CAPACITANCE K CAPACITANCE TOLERANCE K = 10% M = 20% J = 5% B FAIL...bridge method at, or referred to, a frequency of 120 Hz and a temperature of + 25C. Leakage Current:...
Description Solid Tantalum Chip Capacitors MIDGET Military, MIL-PRF-55365/4 Qualified 固体钽芯片电容器侏儒军事,军用,脉冲重复频率,四分之五万五千三百六十五合
Solid Tantalum Chip Capacitors MIDGET Military/ MIL-PRF-55365/4 Qualified

File Size 93.83K  /  7 Page

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