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NXP Semiconductors N.V.
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Part No. |
CGD1046HI
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OCR Text |
...ction field effect transistor (hfet) gaas dies. 1.2 features and benefits |
Description |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
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File Size |
78.51K /
8 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
CGD942C
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OCR Text |
...etero field effe ct transistor (hfet) gaas dies. 1.2 features and benefits |
Description |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (hfet) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
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File Size |
78.98K /
8 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
CGD1044H
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OCR Text |
...ction field effect transistor (hfet) gaas dies. 1.2 features and benefits |
Description |
1 GHz, 25 dB gain high output power doubler CGD1044H<SOT115J|<<<1<Always Pb-free,;
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File Size |
75.78K /
8 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor, Inc.
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Part No. |
TGA2925-SG-T/R
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OCR Text |
... 8 V @ 0.75 A (Quiescent) 0.5 m hfet Technology 2 lead Cu-alloy base package 802.16 and WiMax S-Band Power Amplifiers
Primary Applications
Product Description
The TGA2925-SG HPA provides 11 dB of gain, 5.6 W of output power at 3.5 GH... |
Description |
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File Size |
421.66K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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