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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21045NR1
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| OCR Text |
....5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 39 dBc in 3.84 MHz Ch...45 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Pa... |
| Description |
RF Power Field Effect Transistors
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| File Size |
551.60K /
16 Page |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19100HSR3 MRF5S19100HD MRF5S19100HR3
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| OCR Text |
....9 dB Drain Efficiency -- 25.5% IM3 @ 2.5 MHz Offset -- - 36.5 dBc @ 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 50.7 dBc @ 30 k...45 -50 -10 -15 -20 -25 -30 -35
5 -55 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 f, FREQUEN... |
| Description |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
723.32K /
12 Page |
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FREESCALE SEMICONDUCTOR INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19090LSR3 MRF5S19090LR3
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| OCR Text |
...ciency -- 25.8% ACPR -- - 51 dB IM3 -- - 37 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Li...45 -50 -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 650 mA IDQ = 450 mA 1100 mA 1300 mA 850 mA VDD = ... |
| Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
409.09K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S19090HSR3 MRF5S19090HR3
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| OCR Text |
....5 dB Drain Efficiency -- 25.8% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset -- - 51 dB in 30 kHz Bandwidt...45 -50 -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 650 mA IDQ = 450 mA 1100 mA 1300 mA 850 mA VDD = ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
413.60K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S19060MR1 MRF5S19060MBR1
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| OCR Text |
...- 14 dB Drain Efficiency -- 23% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz...45 -50 -55 -60 1 550 mA 750 mA
13 350 mA 12 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
10 Pout, O... |
| Description |
RF Power Field Effect Transistors
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| File Size |
486.13K /
16 Page |
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it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MRF5P21240R6 MRF5P21240
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| OCR Text |
...Gain -- 13 dB Efficiency -- 24% IM3 -- -36 dBc ACPR -- -39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficie...45 -50 2200
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2-Carrier W-CDMA B... |
| Description |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
770.91K /
8 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5P21045NR1
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| OCR Text |
....5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 39 dBc in 3.84 MHz Ch...45 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Pa... |
| Description |
RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
411.71K /
11 Page |
View
it Online |
Download Datasheet |
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