... 8 10 12 30 0.2 12 1.8
Unit
mA V
Conditions
VD=VDRm, RGK= , Tj=125C
VD=VDRm, RGK= , Tj=25C Pulse test, ITm=10A
T2 , G V VD=6V,...PG
m
W =5
3
On-state voltage
vT ( V )
Number of cycle
Gate current
iGF (A)
IT...
... 8 10 12 30 0.2 12 3.6
Unit
mA V
Conditions
VD=VDRm, RGK=, Tj=125C VD=VDRm, RGK=, Tj=25C Pulse test, ITm=10A T2 , G
+ + - - + -
...PG
m
W =5
3
On-state voltage
vT ( V )
Number of cycle
Gate current
iGF (A)
IT...
...3 -- 3.0 -- 100 0.3 0.2 -- Unit mA mA V V/s V V mA C/ W C/ W m
Feb.1999
mITSUBISHI THYRISTOR mODULES
Tm90DZ/CZ-m,-H
HIGH POWER GEN...PG(AV)= 3 0.50W 2 IGT= 10 0 100mA 7 5 Tj=25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3...
...4 -- 2.0 -- 100 0.3 0.2 -- Unit mA mA V V/s V V mA C/ W C/ W m
Note: Items of the above table applies to the Thyristor part and the Diode...PG (AV)
VFGm
IFGm
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Th...
Description
8 Characters x 2 Lines, 5x7 Dot matrix Character and Cursor 高压大功率常规使用绝缘型 HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE
...3 -- 3.0 -- 100 0.3 0.2 -- Unit mA mA V V/s V V mA C/ W C/ W m
Note: Items of the above table applies to the Thyristor part and the Diode...PG (AV)
VFGm
IFGm
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Th...
Description
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型 8 Characters x 2 Lines, 5x7 Dot matrix Character and Cursor
...1.15 -- 3.0 -- 100 0.2 0.3 Unit mA mA V V/s V V mA C/ W C/ W
Feb.1999
mITSUBISHI THYRISTOR mODULES
Tm90SA-6
mEDIUm POWER GENERAL USE
NON-INSULATED TYPE
PERFORmANCE CURVES
mAXImUm ON-STATE CHARACTERISTIC RATED SURGE (NON-REPET...
... TYP Value 150 1.5 0.2 2.5 Unit mA V V s mA
VD=VDRm RL=3.3k VD=VDRm IG = 500mA dIG/dt = 3A/s IG=1.2 IGT
IL
Tj=25C
I-III II
TYP
100 200
IH * VTm * IDRm IRRm dV/dt *
IT= 500mA gate open ITm = 35A tp= 380s VDRm VRRm Rat...
... TYP Value 200 1.5 0.2 2.5 Unit mA V V s mA
VD=VDRm RL=3.3k VD=VDRm IG = 500mA dIG/dt = 3A/s IG=1.2 IGT
IL
Tj=25C
I-III II
TYP
100 200
IH * VTm * IDRm IRRm dV/dt *
IT= 500mA gate open ITm = 60A tp= 380s VDRm VRRm Rat...