...rature for good contrast * 4.19 mhz oscillator * 12-hour or 24-hour mode * Operating ambient temperature: -40 to +85 C * 28-lead plastic SMD...1. See Fig.1 and Chapter "Package outline" for pin layout and package details. 2. See Chapter "Chip ...
...MAX. - - - - 0.2 - -
UNIT
mhz dB V/s V/s V V %
Tamb = 25 C; see Fig.8 -
0.85VDD - - 1
Capacitors C1, C2, C3 and C4
3. Slew rates are measured between 10% and 90% of output voltage level with an load of approximately 40 pF ...
Description
Power amplifier controller for GSM and PCN systems From old datasheet system
...
Gate input resistance f = 1 mhz, open drain
1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR Page 2
2002-10-07
Final data Electrical Characteristics , at Tj = 25 C, unless otherwise s...
Description
for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
...f (V DS) parameter: VGS=0V, f=1 mhz
10
5
16 Typ. Coss stored energy Eoss=f(V DS)
14
pF J
10
4
10
Ciss
C
E oss
8 6 4 2
10
3
10
2
Coss
Crss
10
1
0
100
200
300
400
V
0 600 0 10...
Description
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 Cool MOS?/a> Power Transistor Cool MOS Power Transistor Cool MOS⑩ Power Transistor for lowest Conduction Losses & fastest Switching
... RD S(on) max V DS = 25 V f = 1 mhz ID = 2 A VG S = 0 Min. 1 Typ. 2.5 500 85 15 700 120 30 Max. Unit S pF pF pF
2/10
STD4N25
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Ris...
Description
From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS