rg-122 u pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 625 Search Time::4.859ms
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				ON Semiconductor
Part No.	NDF11N50Z NDF11N50ZG NDP11N50Z NDP11N50ZG
OCR Text	... 10.5 A, VGS = 10 V Qgs Qgd VGP Rg td(on) VDD = 250 V, ID = 10.5 A, VGS = 10 V, RG = 5 tr td(off) tf 3.0 7.7 1375 166 40 46 8.7 25 6.2 1.4 ...122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0...
Description	N-Channel Power MOSFET 500 V, 0.52
File Size	114.46K / 7 Page	View it Online	Download Datasheet

				Rosenberger group
Part No.	38K202-302E3
OCR Text	...150-102 suitable cables rg 316 /u, rg 174 a/u, rg 188 a/u packing standard 1 pce in bag weight 1.4 g/pce draft date approved date rev. engineering change number name date inge mhlauer 28/09/04 rong fang ...
Description	CABLE TERMINATED, FEMALE, SSMC CONNECTOR, CRIMP, JACK
File Size	111.62K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	GA600GD25S
OCR Text	...E = 15V TJ = 25 C I C = 600A RG = 15; RG2 = 0 V GE = 15V V CC = 150V I C = 1000A 140 IC = 600A 130 100 I C = 300A 120 110 0 10 20 30 40 50 10 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 RG , Gate Resistance ...
Description	SINGLE SWITCH IGBT DuAL INT-A-PAK
File Size	623.98K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STP7NK80ZFP STP7NK80Z10 STB7NK80Z STB7NK80Z-1 STB7NK80ZT4
OCR Text	... 640 V VDD = 400 V, ID = 2.6 A, RG = 4.7 , VGS = 10 V (see Figure 17) VDD = 640 V, ID = 5.2 A, VGS = 10 V (see Figure 18) VDD = 640 V, ID = 5.2 A, RG = 4.7 , VGS = 10 V (see Figure 17) - td(on) tr tr(off) tr Qg Qgs Qgd tr(Voff) tr tc ...
Description	N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH Power MOSFET N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH?/a> Power MOSFET
File Size	912.99K / 17 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	MG200J6ES61 MG200F6ES61
OCR Text	...C = 300V, IC = 200A, VGE = 15V, RG = 10 VGE = 20V, VCE = 0V VGE = 0V, VCE = 600V VCE = 5V, IC = 200mA VGE = 15V, IC = 200A, Tj = 25C VGE = 15V, IC = 200A, Tj = 125C VCE = 10V, VGE = 0V, f = 1MHz -- -- 5.0 -- -- -- -- -- -- -- -- -- -- 6.5 2...
Description	Six IGBTMOD⑩ Compact IGBT Series Module 200 Amperes/600 Volts
File Size	176.49K / 4 Page	View it Online	Download Datasheet

				LINEAR TECHNOLOGY CORP Linear Technology, Corp. LINER[Linear Technology]
Part No.	LT1168_06 LT1168 LT1168ACN8 LT1168ACS8 LT1168AIN8 LT1168AIS8 LT1168CN8 LT1168CS8 LT1168IN8 LT1168IS8 LT1168ACN8PBF LT1168CN8PBF
OCR Text	... ORDER PART NuMBER TOP VIEW RG 1 -IN 2 +IN 3 -VS 4 N8 PACKAGE 8-LEAD PDIP S8 PACKAGE 8-LEAD PLASTIC SO TJMAX = 150C, JA = 150C/ W (N8) ...122 131 135 95 115 135 140 108 128 145 150 350 530 +VS - 1.2 +VS - 1.3 32 400 200 13 1 85 100 ...
Description	Low Power, Single Resistor Gain Programmable, Precision Instrumentation Amplifier; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C INSTRuMENTATION AMPLIFIER, 60 uV OFFSET-MAX, 0.4 MHz BAND WIDTH, PDIP8
File Size	339.14K / 20 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	AuIRLR3410
OCR Text	... VGS = 5.0V VDD = 50V ID = 9.0A RG = 6.0 VGS = 5.0V Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz fg fg D G S ns nH pF Diode Characteristics Parameter IS ISM VSD trr Qrr t...
Description	HEXFET Power MOSFET
File Size	245.92K / 12 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] MICROSEMI POWER PRODUCTS GROUP
Part No.	APT10045LLL APT10045B2LL APT10045B2LL_03 APT10045B2LL03 B2LLG
OCR Text	...= 15V VDD = 500V ID = 23A @ 25C RG = 1.6 6 INDuCTIVE SWITCHING @ 25C VDD = 670V, VGS = 15V ID = 23A, RG = 5 6 INDuCTIVE SWITCHING @ 125C VDD...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOSFET; Package: T-MAX [B2]; ID (A): 23; RDS(on) (Ohms): 0.45; BVDSS (V): 1000;
File Size	90.08K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT10045LFLL APT10045B2FLL APT10045B2FLL_03 APT10045B2FLL03
OCR Text	...= 15V VDD = 500V ID = 23A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 670V, VGS = 15V ID = 23A, RG = 5 6 INDuCTIVE SWITCHING @ 125C VDD...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	90.03K / 5 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMN6068SE11 DMN6068SE-13
OCR Text	...ion with L = 3.0mH, IAS = 5.0A, RG = 25, VDD=50V, starting TJ = 25C. DMN6068SE Document Number DS32033 Rev. 2 - 2 2 of 9 www.diodes.c...122 0.009 0.013 DIM D e e1 E E1 L Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3....
Description	60V N-CHANNEL ENHANCEMENT MODE MOSFET 60V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	621.00K / 9 Page	View it Online	Download Datasheet

For rg-122 u Found Datasheets File :: 625 Search Time::4.859ms
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