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Philips
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Part No. |
BuK7614-55 BuK7614-55A
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OCR Text |
... = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad
REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS
Tj = 25C unles... |
Description |
TrenchMOS(tm) transistor Standard level FET TrenchMOS TM transistor Standard level FET
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File Size |
50.92K /
8 Page |
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it Online |
Download Datasheet |
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PHILIPS[Philips Semiconductors]
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Part No. |
PHB87N03T
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OCR Text |
... = 25 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad
December 1997
2
Rev 1.200
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Description |
TrenchMOS transistor Standard level FET
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File Size |
65.33K /
8 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
MGB15N40CLT4 MGP15N40CL MGC15N40CL
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OCR Text |
...ability Optional Gate Resistor (RG)
N-CHANNEL IGBT 15 A, 410 V VCE(on) = 1.8 V MAX
C
G
RG RGE
E
MAXIMuM RATINGS (TJ = 25C un...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
Description |
Internally Clamped N-Channel IGBT 15 A, 440 V, N-CHANNEL IGBT
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File Size |
99.61K /
8 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
MGB15N35CLT4 MGP15N35CL MGC15N35CL
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OCR Text |
...ability Optional Gate Resistor (RG)
N-CHANNEL IGBT 15 A, 350 V VCE(on) = 1.8 V MAX
C
G
RG RGE
E
MAXIMuM RATINGS (TJ = 25C un...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
Description |
Internally Clamped N-Channel IGBT
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File Size |
99.24K /
8 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
MGW21N60ED_D ON1926 MGW21N60ED ON1925
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OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Diode Thermal Resi...142 1.14 - 55 to 150 10 0.88 1.4 45 260 10 lbfSin (1.13 NSm)
unit Vdc Vdc Vdc Adc Apk Watts W/C C... |
Description |
IGBT IN TO-47 21 A @ 90 31 A @ 25 600 VOLTS From old datasheet system Insulated Gate Bipolar Transistor
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File Size |
148.64K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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