rg-142 u pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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rg-142 u Datasheet PDF File

For rg-142 u Found Datasheets File :: 340 Search Time::1.407ms
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				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BuK7510-30
OCR Text	... = 25 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad Decembe...
Description	TrenchMOS transistor Standard level FET 75 A, 30 V, 0.0195 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	45.39K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BuK9614-55
OCR Text	...D = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS Tj = 25C unless otherwise ...
Description	TrenchMOS transistor Logic level FET
File Size	51.52K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP87N03T
OCR Text	... = 25 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad Septemb...
Description	TrenchMOS transistor Standard level FET
File Size	59.62K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BuK7614-55 BuK7614-55A
OCR Text	... = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS Tj = 25C unles...
Description	TrenchMOS(tm) transistor Standard level FET TrenchMOS TM transistor Standard level FET
File Size	50.92K / 8 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL21E090IY
OCR Text	... VDS IGF IGR T ch Condition RG=2 RG=2 Limit <28 <352 >-31 155 unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc...142.62 -148.63 154.66 115.92 93.577 82.725 72.912 77.149 67.632 65.358 0.0011 0.0012 0.0014 0.001...
Description	L,S-band High Power GaAs FET
File Size	294.79K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	PHB87N03T
OCR Text	... = 25 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad December 1997 2 Rev 1.200 ...
Description	TrenchMOS transistor Standard level FET
File Size	65.33K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MGB15N40CLT4 MGP15N40CL MGC15N40CL
OCR Text	...ability Optional Gate Resistor (RG) N-CHANNEL IGBT 15 A, 410 V VCE(on) = 1.8 V MAX C G RG RGE E MAXIMuM RATINGS (TJ = 25C un...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ...
Description	Internally Clamped N-Channel IGBT 15 A, 440 V, N-CHANNEL IGBT
File Size	99.61K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTD4855N-1G NTD4855N-35G NTD4855NT4G
OCR Text	... 10 V, IL = 21 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C 2 1 23 1 D...142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 ...
Description	Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK
File Size	91.34K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MGB15N35CLT4 MGP15N35CL MGC15N35CL
OCR Text	...ability Optional Gate Resistor (RG) N-CHANNEL IGBT 15 A, 350 V VCE(on) = 1.8 V MAX C G RG RGE E MAXIMuM RATINGS (TJ = 25C un...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ...
Description	Internally Clamped N-Channel IGBT
File Size	99.24K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MGW21N60ED_D ON1926 MGW21N60ED ON1925
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Diode Thermal Resi...142 1.14 - 55 to 150 10 0.88 1.4 45 260 10 lbfSin (1.13 NSm) unit Vdc Vdc Vdc Adc Apk Watts W/C C...
Description	IGBT IN TO-47 21 A @ 90 31 A @ 25 600 VOLTS From old datasheet system Insulated Gate Bipolar Transistor
File Size	148.64K / 6 Page	View it Online	Download Datasheet

For rg-142 u Found Datasheets File :: 340 Search Time::1.407ms
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