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  rg-188 Datasheet PDF File

For rg-188 Found Datasheets File :: 544    Search Time::1.219ms    
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    STP16NK65Z STB16NK65Z-S

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STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. STP16NK65Z STB16NK65Z-S
OCR Text ...o 520 V VDD = 325 V, ID = 6.5 A RG = 4.7 VGS = 10 V (see Figure 17) VDD = 520 V, ID = 13 A, VGS = 10 V (see Figure 20) Table 9: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Sour...
Description From old datasheet system
N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET

File Size 216.86K  /  12 Page

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    INTERSIL[Intersil Corporation]
Part No. FRK9150H FRK9150R FRK9150D FN3266
OCR Text ...Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN -100 -2.0 3 58 129 -3 16 21 -0.6 MAX -4.0 100 100 1 0.025 0.25 78 ...188 UNITS V V V V nA nA nA nA A A V V 4-3 FRK9150D, FRK9150R, FRK9150H Typical Performance C...
Description 26A/ -100V/ 0.125 Ohm/ Rad Hard/ P-Channel Power MOSFETs
26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 47.84K  /  6 Page

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    IT130A LSIT130-2 IT130 IT131 IT132

Linear Integrated System, Inc
LINEAR[Linear Integrated Systems]
Part No. IT130A LSIT130-2 IT130 IT131 IT132
OCR Text ... IC = 100A VCE = 5V BW = 200Hz, RG = 10 K f=1KHz Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 * TEL: (510) 490-9160...188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 ...
Description MONOLITHIC DUAL PNP TRANSISTORS 整体式双PNP晶体

File Size 26.07K  /  2 Page

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    IXTH40N30NBSP IXTH40N30 IXTM40N30

IXYS Corporation
Part No. IXTH40N30NBSP IXTH40N30 IXTM40N30
OCR Text ...VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 40 75 40 190 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. VG...188 .675 L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 ...
Description N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET

File Size 106.84K  /  4 Page

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    MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTB52N06V_D ON2438 MTB52N06V
OCR Text ...0 Vdc, IL = 52 Apk, L = 0.3 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistanc...188 1.25 3.0 - 55 to 175 406 0.8 62.5 50 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C Watts C mJ C/W ...
Description From old datasheet system
TMOS POWER FET 52 AMPERES 60 VOLTS

File Size 194.18K  /  10 Page

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    ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTB52N06VL_D ON2437 MTB52N06VL ON2436
OCR Text ..., PEAK IL = 52 Apk, L = 0.3 mH, RG = 25 ) Thermal Resistance -- Junction to Case -- Junction to Ambient -- Junction to Ambient (1) Maximum L...188 1.25 3.0 - 55 to 175 406 0.8 62.5 50 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C Watts C mJ C/...
Description TMOS POWER FET 52 AMPERES 60 VOLTS
From old datasheet system

File Size 197.04K  /  10 Page

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    STS10PF30L

STMICROELECTRONICS[STMicroelectronics]
Part No. STS10PF30L
OCR Text ...VDD = 15 V ID = 5 A VGS = 4.5 V RG = 4.7 (Resistive Load, Figure 15) VDD= 15V ID= 10A VGS=4.5V (see test circuit, Figure 16) Min. Typ. 72 8...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET
From old datasheet system

File Size 193.96K  /  9 Page

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    IXTH35N30

IXYS[IXYS Corporation]
Part No. IXTH35N30
OCR Text ...VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 40 75 40 190 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. VG...188 .675 L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 ...
Description MegaMOSTMFET

File Size 106.85K  /  4 Page

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    IRF[International Rectifier]
Part No. IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
OCR Text ...IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 25C IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 25C Ref.Fig. 23 CT1 CT4 J d ns CT4 J ns IC = 15A, VCC = 400V VGE = 15V...
Description 600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 275.00K  /  12 Page

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    STS1HNK60 9513

STMicroelectronics
Part No. STS1HNK60 9513
OCR Text ...ditions VDD = 300 V, ID = 0.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480 V, ID = 1 A, VGS = 10V, RG = 4.7 Min. Typ. 6.5 ...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description N-CHANNEL 600V - 8 OHM - 0.3A SO-8 SUPERMESH POWER MOSFET
From old datasheet system

File Size 297.41K  /  8 Page

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For rg-188 Found Datasheets File :: 544    Search Time::1.219ms    
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