rg-188 u pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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rg-188 u Datasheet PDF File

For rg-188 u Found Datasheets File :: 233 Search Time::1.484ms
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				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	VuB120-12NO2 VuB120-16NO2 VuB160-16NO2 VuB160-12NO2
OCR Text	... 15 V, VCE = 900 V, TVJ = 125C, RG = 15/10 , non repetitive VGE = 15 V, VCE = 1200 V, TVJ = 125C, Clamped Inductive load, L = 100 H RG = 15 VuB 120 RG = 10 VuB 160 VCE = 25 V, f = 1 MHz, VGE = 0 V VuB 120 VuB 160 RBSOA Cies td(on) ...
Description	Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
File Size	64.92K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ46S
OCR Text	... VDD = 28V --- I D = 54A ns --- RG = 9.1 --- RD = 0.49, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET Power MOSFET
File Size	333.35K / 10 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT6010JFLL
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP MAX uNIT pF 6760 1210 76 155 36 69 18 13 40 6 ns nC Gate-Source Charge Gate-Drain (...188 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C (Body Diode) (VGS = 0V, IS =...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.22K / 2 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT6010JFLL
OCR Text	...= 15V VDD = 300V ID = 47A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 47A, RG = 5 6 INDuCTIVE SWITCHING @ 125C VDD...188 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	259.09K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT6010JLL
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 47 188 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Re...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.74K / 2 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT6010JLL
OCR Text	...= 15V VDD = 300V ID = 47A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 47A, RG = 5 6 INDuCTIVE SWITCHING @ 125C VDD...188 1.3 790 17.9 8 MIN TYP MAX (Body Diode) (VGS = 0V, IS = -47A) Reverse Recovery Time (IS =...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	258.32K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	CPV364M4F
OCR Text	... 15A, VCC = 480V 330 VGE = 15V, RG = 10 240 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 1.8 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 15A, VCC = 480V --- VGE = 15V, RG = 10 --- Energy l...
Description	IGBT SIP MODuLE
File Size	242.68K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	CPV364M4u
OCR Text	... 10A, VCC = 480V 140 VGE = 15V, RG = 10 160 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 0.7 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 10A, VCC = 480V --- VGE = 15V, RG = 10 --- Energy l...
Description	IGBT SIP MODuLE
File Size	262.14K / 10 Page	View it Online	Download Datasheet

For rg-188 u Found Datasheets File :: 233 Search Time::1.484ms
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