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Hitachi,Ltd.
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Part No. |
HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6
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OCR Text |
...1 ns ras to we delay time t rwd 67 79 92 ns 14 cas to we delay time t cwd 30 34 40 ns 14 column address to we delay time t awd 42 49 57 ns 14 oe hold time from we t oeh 13 15 18 ns refresh cycle hm51w17805 -5 -6 -7 pa... |
Description |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh 16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位)2刷新
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File Size |
430.53K /
33 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM416C4100B
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OCR Text |
...s 7,15 ras to w delay time t rwd 67 73 83 ns 7 column address to w delay time t awd 43 48 53 ns 7 cas precharge w delay time t cpwd 48 53 60 ns cas set-up time ( cas -before- ras refresh) t csr 5 5 5 ns 17 cas hold time ( cas -... |
Description |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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File Size |
833.81K /
35 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM364C213CK
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OCR Text |
... max ras to w delay time t rwd 71 83 ns 7,11 cas setup time( cas -before- ras refresh) t csr 10 10 ns 11 cas hold time( cas -before- ras refresh) t chr 8 8 ns 11 ras precharge to cas hold time t rpc 3 3 ns 11 access time from ... |
Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
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File Size |
366.80K /
19 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM366F1600BK2 KMM366F1680BK2
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OCR Text |
...8 ns 7 ras to w dealy time t rwd 70 84 ns 7
dram module kmm366f160(8)0bk2 ac characteristics (0 c t a 70 c, v cc =3.3v 0.3v. see notes 1,2.) test condition : v ih /v il =2.2/0.7v, v oh /v ol =2.0/0.8v, output loading c l =100pf ... |
Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块) 16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
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File Size |
425.18K /
20 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM366F1600BK3 KMM366F1680BK3
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OCR Text |
...8 ns 7 ras to w dealy time t rwd 70 84 ns 7
dram module kmm366f160(8)0bk3 rev. 0.0 (nov. 1997) - 7 - ac characteristics (0 c t a 70 c, v cc =3.3v 0.3v. see notes 1,2.) test condition : v ih /v il =2.2/0.7v, v oh /v ol =2.0/0.8v,... |
Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块) 16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
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File Size |
444.05K /
21 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM366F203CK KMM366F213CK
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OCR Text |
...0 ns 7 ras to w dealy time t rwd 73 85 ns 7,14
dram module kmm366f213ck kmm366f203ck test condition : v ih /v il =2.0/0.8v, v oh /v ol =2.0/0.8v, output loading cl=100pf parameter symbol -5 -6 unit note min max min max column address ... |
Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块) 2M x 64 DRAM DIMM(2M x 64 ?ㄦ?RAM妯″?)
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File Size |
408.83K /
20 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM366F410CK1 KMM366F400CK1
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OCR Text |
...in max ras to w dealy time t rwd 73 85 ns 7 column address to w delay time t awd 48 55 ns 7 cas precharge to w delay time t cpwd 53 60 ns cas setup time ( cas -before- ras refresh) t csr 5 5 ns cas hold time ( cas -before- ras ... |
Description |
4M x 64 DRAM DIMM(4M x 64 动RAM模块)
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File Size |
384.74K /
20 Page |
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it Online |
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SIEMENS AG
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Part No. |
Q67100-Q1074 HYB5118160BSJ-50
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OCR Text |
...80 C ns ras to we delay time t rwd 68 C 80 C 95 C ns 15 cas to we delay time t cwd 31 C 35 C 45 C ns 15 column address to we delay time t awd 43 C 50 C 60 C ns 15 oe command hold time t oeh 13 C 15 C 20 C ns fast page mode cycle fast p... |
Description |
1M x 16-Bit Dynamic RAM 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
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File Size |
256.71K /
24 Page |
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it Online |
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SIEMENS AG
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Part No. |
Q67100-Q1148
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OCR Text |
...80 C ns ras to we delay time t rwd 68 C 80 C 95 C ns 15 cas to we delay time t cwd 31 C 35 C 45 C ns 15 column address to we delay time t awd 43 C 50 C 60 C ns 15 oe command hold time t oeh 13 C 15 C 20 C ns fast page mode cycle fast p... |
Description |
2M x 8-Bit Dynamic RAM
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File Size |
263.37K /
26 Page |
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it Online |
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Price and Availability
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