...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information c...4. Design your application so that the product is used within the ranges guaranteed by Hitachi parti...
...
2.8 -0.3
+0.2
Unit: mm
s Features
q q
0.650.15
+0.25 1.5 -0.05
0.650.15
0.95
1.1 -0.1
+0.2
Collector to base ...4 -0.05
High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equ...
...duct of no-rank is not Rank Q R S No-rank classified and have no hFE1 85 to 170 120 to 240 170 to 340 85 to 340 marking symbol for rank. 2SB...4 mA -3 mA -2 mA -1 mA
120
-600
80
-400
40
-200
0
0 0 40 80 120 160
Colle...
...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information c...4. Design your application so that the product is used within the ranges guaranteed by Hitachi parti...
s Features
q q
High foward current transfer ratio hFE. High collector to emitter voltage VCEO.
s Absolute Maximum Ratings
Parameter ...4 -6 -8 -10 -12 -20A 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0
Ambient temperature Ta (C)
Collector to em...
....5 -3.0 -2.0 -3.5 -- -- V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V...4 DC current transfer ratio hFE
Typical Output Characteristics -5
-3
-2
-0.9 -0.8 -0.7 -...
...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information c...4. Design your application so that the product is used within the ranges guaranteed by Hitachi parti...
...censes of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information c...4. Design your application so that the product is used within the ranges guaranteed by Hitachi parti...
...rcuit board. (Ta=25C)
1.0
s
2.50.1 1.0
Features
1.5
1.5 R0.9 R0.9
1.00.1
R
0.
s Absolute Maximum Ratings
Para...4.10.2
4.50.1
7
Unit nA A V
-35 -55 -35 -55 -5 180 700 - 0.6 - 0.7 150 150 -1
V V
...
Description
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR
...2SD874 and 2SD874A
Unit: mm
s Features
q q
2.60.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collec...4.0-0.20
0.40.04
emitter voltage 2SB766A Emitter to base voltage Peak collector current Collec...