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Part No. |
FSGYC065D1 FSGYC065R3 FSGYC065R4
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OCR Text |
...rad specifications to 100 krad (si) single event - safe operating area curve for single event effects - see immunity for let of 82mev/mg/c...sd i sd = 70a - - 1.2 v reverse recovery time t rr i sd = 70a, di sd /dt = 100a/ s - - 160 ns rev... |
Description |
TRANsiSTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | SMT
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File Size |
104.96K /
7 Page |
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Opti
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Part No. |
82C283
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OCR Text |
...l signal. cpurst 24 o cpu reset si gnal. nmi 23 o non-maskable interrupt. wr# 15 i write or read is a bus cycle definition pin that distingu...sd[15:0] 71:78, 82:89 i/o system data bus lines 15 through 0. these si gnals are c onnected to at d... |
Description |
386SX System Controller
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File Size |
236.95K /
24 Page |
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it Online |
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ST Microelectronics
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Part No. |
STRH100N10FSY302 STRH100N10FSY301
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OCR Text |
... = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = ...sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 50 a, v gs = ... |
Description |
48 A, 100 V, 0.035 ohm, N-CHANNEL, si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
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File Size |
398.85K /
17 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STRH100N10FSY01 STRH100N10FSY02 STRH100N10FSY1
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OCR Text |
... = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = ...sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 50 a, v gs = ... |
Description |
48 A, 100 V, 0.035 ohm, N-CHANNEL, si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
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File Size |
401.61K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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