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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
Insulated Gate bipolar transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT
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File Size |
139.45K /
5 Page |
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it Online |
Download Datasheet |
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Motorola, Inc.
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Part No. |
HC05 MC68HC705X32
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Description |
bipolar transistor; transistor Polarity:Dual P Channel; Power Dissipation:20W; DC Current Gain Min (hfe):25; Collector Current:1A; DC Current Gain Max (hfe):200; Power (Ptot):20W HCMOS microcontroller unit
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File Size |
948.81K /
232 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
MGW12N120
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Description |
Insulated Gate bipolar transistor N-Channel Insulated Gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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File Size |
133.06K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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