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  to247-4 Datasheet PDF File

For to247-4 Found Datasheets File :: 333    Search Time::2.516ms    
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    SPW35N60C305

Infineon Technologies AG
Part No. SPW35N60C305
OCR Text ...ring code marking spw35n60c3 pg-to247 q67040-s4673 35n60c3 pg-to247 rev. 2.4 page 1 200 5-09-21 reverse diode dv/dt dv/dt ...
Description CoolMOSTM Power Transistor

File Size 444.77K  /  11 Page

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    IDW40E65D1

Infineon Technologies AG
Part No. IDW40E65D1
OCR Text ...650v 40a 1.35v 175c d40e65d1 pg-to247-pin123 a c 1 2 3 3 idw40e65d1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Ultra fast recovery

File Size 1,877.52K  /  11 Page

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    PHW14N50E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHW14N50E
OCR Text ...N50E is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT429 ...4.5 7.5 1700 250 140 0.4 4.0 20 500 200 150 12 60 V %/K V S A A nA nC nC nC ns ns ns ns nH nH nH pF...
Description PowerMOS transistors Avalanche energy rated

File Size 80.54K  /  7 Page

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    PHW35NQ20T PHW35NQ20T_1

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. PHW35NQ20T PHW35NQ20T_1
OCR Text ...Q20T is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT429 ...4.5 7.5 4570 370 160 4.0 6 70 203 100 10 500 V V V V V m m nA A A nC nC nC ns ns ns ns nH nH nH pF p...
Description N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor

File Size 92.25K  /  7 Page

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    MGW12N120-D

ON Semiconductor
Part No. MGW12N120-D
OCR Text ... ? industry standard high power to247 package with isolated mounting hole ? high speed e off : 150 j/a typical at 125 c ? high short c...4 to247ae motorola preferred device g c e c e g ? motorola, inc. 1997 mgw12n120 2 motorola igbt d...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 123.24K  /  6 Page

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    PSMN020-150W

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PSMN020-150W
OCR Text ...150W is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT429 ...4.5 7.5 6429 785 435 4.0 4.4 20 57 100 10 500 7000 810 500 V V V V V m m nA A A nC nC nC ns ns ns ns...
Description N-channel TrenchMOS transistor

File Size 28.25K  /  4 Page

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    MTW32N25E-D

ON Semiconductor
Part No. MTW32N25E-D
OCR Text ...fet 32 amps, 250 volts nchannel to247 this advanced power mosfet is designed to withstand high energy in the avalanche and commutation modes...4 1 gate 3 source 4 drain 2 drain mtw32n25e http://onsemi.com 2 electrical characteristics (t j ...
Description Power MOSFET 32 Amps, 250 Volts N-Channel TO-247

File Size 63.81K  /  8 Page

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    BUK438W-800A BUK438-800A BUK438-800B BUK438W-800B

NXP Semiconductors
Philips Semiconductors
Part No. BUK438W-800A BUK438-800A BUK438-800B BUK438W-800B
OCR Text ...NIT V A W PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION SYMBOL d g 1 2 ...4.8 30 220 150 150 MAX. 800 800 30 -800B 6.6 4.1 26 UNIT V V V A A A W C C THERMAL RESISTANCES S...
Description RECTIFIER BRIDGE 8A 100V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
RECTIFIER BRIDGE 8A 200V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
PowerMOS transistor

File Size 64.66K  /  7 Page

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    MTW32N20E MTW32N20E-D

ON Semiconductor
Part No. MTW32N20E MTW32N20E-D
OCR Text ...fet 32 amps, 200 volts nchannel to247 this advanced power mosfet is designed to withstand high energy in the avalanche and commutation modes...4 1 gate 3 source 4 drain 2 drain mtw32n20e http://onsemi.com 2 electrical characteristics (t j ...
Description Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)

File Size 99.64K  /  8 Page

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    PSMN020-150W PSMN020

NXP Semiconductors
Part No. PSMN020-150W PSMN020
OCR Text ...ral description pinning sot429 (to247) siliconmax products use the latest pin description philips trench technology to achieve the lowest po...4.0 v t j = 175?c 1.0 - - v t j = -55?c - - 6 v r ds(on) drain-source on-state v gs = 10 v; i d ...
Description    N-channel TrenchMOS? transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体

File Size 119.76K  /  7 Page

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