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  transistor diode Datasheet PDF File

For transistor diode Found Datasheets File :: 25850    Search Time::1.891ms    
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    BSS149 Q67000-S252

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BSS149 Q67000-S252
OCR Text transistor BSS 149 q q q q q q q VDS 200 V ID 0.35 A RDS(on) 3.5 N channel Depletion mode High dynamic resistance Available group...diode Continuous reverse drain current TA = 25 C Pulsed reverse drain current TA = 25 C diode forwar...
Description SIPMOS ? Small-Signal transistor
SIPMOS Small-Signal transistor (N channel Depletion mode High dynamic resistance)

File Size 278.04K  /  6 Page

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    CMT2N7002E

Champion Microelectronic Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CMT2N7002E
OCR Text transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro...diode Forward On-Voltage (IS = 200 mA, VGS = 0V) Forward Transconductance (VDS = 15 V, ID = 200mA) (...
Description CMT2N7002E

File Size 160.29K  /  6 Page

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    CS5231-3 CS5231-3GDP5 CS5231-3GDPR5

ZF Electronics, Corp.
CHERRY[Cherry Semiconductor Corporation]
Part No. CS5231-3 CS5231-3GDP5 CS5231-3GDPR5
OCR Text ...try to control an external PFET transistor with the intent of managing two input supplies. A 5V supply powers the regulator while an auxilia...diode M1 +3.3V VAUX C1 33F Application Information Theory of Operation The CS5231-3 is a fixed...
Description 500mA, 3.3V Linear Regulator with Auxiliary Control 00mA.3V的线性稳压器的辅助控
500mA/ 3.3V Linear Regulator with Auxiliary Control

File Size 279.89K  /  11 Page

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    DMN100 DMN100-7 DMN100-13

DIODES[Diodes Incorporated]
Part No. DMN100 DMN100-7 DMN100-13
OCR Text transistor Features * * * Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Ph...diode) Continuous Source Current Pulse Source Current Forward Voltage Reverse Recovery Time Notes: 1...
Description 1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT transistor

File Size 62.71K  /  3 Page

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    H2N7002

HSMC[Hi-Sincerity Mocroelectronics]
Part No. H2N7002
OCR Text ...No. : 1/4 H2N7002 N-CHANNEL transistor Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings ...diode Forward Voltage 0.8 0.7 Tj=150C Tj=25C BVDSS(V) 1 0.9 0.8 0.7 0.6 -50 VGS=0 ID=0.25...
Description N-CHANNEL transistor

File Size 63.97K  /  4 Page

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    HCNW4502 HCPL-4503 HCPL-4534 HCNW136 HCNW4503 HCPL-0453 HCPL-0531 HCPL-0452 HCPL-0534 HCPL-2530 HCPL-0530 HCNW135

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. HCNW4502 HCPL-4503 HCPL-4534 HCNW136 HCNW4503 HCPL-0453 HCPL-0531 HCPL-0452 HCPL-0534 HCPL-2530 HCPL-0530 HCNW135
OCR Text ... Video Signal Isolation * Power transistor Isolation in Motor Drives * Line Receivers * Feedback Element in Switched Mode Power Supplies * H...diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector ...
Description Single Channel High Speed Optocouplers
Dual Channel, High Speed Optocouplers
Single Channel, High Speed Optocouplers

File Size 238.71K  /  17 Page

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...te conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ...diode losses. 2 HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Typical Performance Curves ICE, COLLE...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

File Size 137.79K  /  6 Page

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text ...te conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ...diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Test Circuit (Figure 17) ...
Description 45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

File Size 141.01K  /  8 Page

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    HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text ...te conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. ...
Description CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast diode

File Size 162.96K  /  9 Page

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    HGTG20N60A4 HGTP20N60A4

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG20N60A4 HGTP20N60A4
OCR Text ...te conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT i...diode at TJ = 25oC ICE = 20A VCE = 390V VGE =15V RG = 3 L = 500H Test Circuit (Figure 20) (c)2001...
Description 600V, SMPS Series N-Channel IGBTs

File Size 137.64K  /  8 Page

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For transistor diode Found Datasheets File :: 25850    Search Time::1.891ms    
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