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				NXP Semiconductors N.V.
Part No.	PBSS304PD
OCR Text	... Unit V V V A A A mA A mw mw mw w w C C C single pulse; tp 1 ms Tj Tamb Tstg [1] [2] [3] [4] [5] junction temperature ambient tem...open for acceptance or the grant, conveyance or implication of any license under any copyrights, pat...
Description	80 V, 3 A PNP low VCEsat (BISS) transistor 803安PNP低饱和压BISS)晶体
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				NXP Semiconductors N.V.
Part No.	PBSS304PX
OCR Text	...ong * = t: made in Malaysia * = w: made in China PBSS304PX_2 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 ...open emitter open base open collector Min -65 -65 Max -60 -60 -5 -4.2 -8.4 0.6 1.65 2.1 150 +1...
Description	60 V, 4.2 A PNP low V_CEsat (BISS) transistor 60 V, 4.2 A PNP low VCEsat (BISS) transistor
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