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  w-cdma n-cdma Datasheet PDF File

For w-cdma n-cdma Found Datasheets File :: 1949    Search Time::1.328ms    
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    Motorola
Part No. MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
OCR Text ...e Lateral MOSFETs Designed for w-cdma base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u ...
Description 2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET

File Size 200.55K  /  12 Page

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    MRF5S21130HSR3 MRF5S21130HR3

Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
Part No. MRF5S21130HSR3 MRF5S21130HR3
OCR Text ...e Lateral MOSFETs Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u ...
Description 2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

File Size 367.74K  /  12 Page

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    MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MRF9210 MRF9210R3
OCR Text ...ET MRF9210R3 880 MHz, 200 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET Freescale Semiconductor, Inc... CASE 375G - 04, ...CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF N -...
Description MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor

File Size 477.80K  /  8 Page

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    TQP369185 TQP369185-PCB

TriQuint Semiconductor
Part No. TQP369185 TQP369185-PCB
OCR Text ...less technologies such as cdma, w - cdma, and lte. in addition, the tqp36 9185 will work for other various applications within the dc to 6 ghz frequency range. pin # symbol 1 rf i n 3 rf o ut 2, 4 gn d ...
Description DC-6 GHz Gain Block

File Size 673.84K  /  8 Page

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    MRF6S9160H MRF6S9160HR308

Freescale Semiconductor, Inc
Part No. MRF6S9160H MRF6S9160HR308
OCR Text ...ase case temperature 81 c, 160 w cw case temperature 73 c, 35 w cw r jc 0.31 0.33 c/w 1. continuous use at maximum temperature will affe...cdma lateral n - channel rf power mosfets case 465a - 06, style 1 ni - 780s mrf6s9160hsr3 case 465 -...
Description RF Power Field Effect Transistors

File Size 477.84K  /  12 Page

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    ANADIGICS, Inc.
Part No. AWT6308R
OCR Text ...y in a 50 ? system. awt6308r a w t 6 3 0 8 r bias control v batt v en rf in rf out gnd v mode 1 7 5 8 6 gnd at slug (pad) 3 4 2 v cc gnd ...cdma operation (t c = +25 c, v batt = v cc = +3.4 v, v en = +2.4 v, 50 ? ? ? ? ? system) notes...
Description PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module CDMA.4V/28dBm线性功率放大器模块

File Size 173.85K  /  8 Page

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    AFT21S232SR3 AFT21S230SR3

Freescale Semiconductor, Inc
Part No. AFT21S232SR3 AFT21S230SR3
OCR Text ... mhz. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 1500 ma, p out = 50 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 16.7 3...
Description RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 561.02K  /  15 Page

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    MRF8S9202N

Freescale Semiconductor, Inc
Part No. MRF8S9202N
OCR Text ...mats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1300 ma, p out = 58 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%)...
Description RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET

File Size 644.74K  /  13 Page

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    NJG1715KC1

New Japan Radio
njr
Part No. NJG1715KC1
OCR Text w-cdma FRONT-END GaAs MMIC for w-cdma n GENERAL DESCRIPTION n PACKAGE OUTLINE The NJG1715KC1 is a front-end GaAs MMIC including a LNA, a mixer with a local amplifier. The main application is front-end of w-cdma cellular phone handsets. ...
Description w-cdma FRONT-END GaAs MMIC for w-cdma

File Size 293.91K  /  16 Page

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    MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3

Freescale Semiconductor, Inc
Part No. MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3
OCR Text ...mats. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 1700 ma, p out = 75 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (...
Description RF Power Field Effect Transistors

File Size 391.04K  /  14 Page

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For w-cdma n-cdma Found Datasheets File :: 1949    Search Time::1.328ms    
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