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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024V1D-HC10 K6R3024V1D-HC12 K6R3024V1D-HI09 K6R3024V1D-HI10
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| OCR Text |
...PIN FUNCTION
Pin Name A0 - A16 WE Pin Function Addresses Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+3.3v) Gro...pF pF
AC TEST CONDITIONS*(TA=0 to 70C, Vcc=3.30.3V, unless otherwise specified)
Parameter Input ... |
| Description |
From old datasheet system
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作）
128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
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| File Size |
171.26K /
9 Page |
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Winbond Electronics Corp
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| Part No. |
W986416BH
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| OCR Text |
...15 udqm ldqm clk cke cs ras cas we a10 a0 a9 a11 bs0 bs1 . clock buffer command decoder address buffer refresh counter column counter contro...pf c i input capacitance ( clk) - 4 pf c o input/output capacitance - 6.5 pf note: these parameters ... |
| Description |
1M words x 16 bit x 4 Banks SDRAM(1Mx 16 x 4 组同步动态RAM)
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| File Size |
2,065.07K /
42 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
HDMIULC6-4SC6
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| OCR Text |
... surges
Calculation example
We assume that the value of the dynamic resistance of the clamping diode is typically: Rd = 0.5 and VT = 1.1 V. We assume that the value of the dynamic resisteance of the transil diode is typically Rd_TRANSI... |
| Description |
Ultra large bandwidth ESD protection
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| File Size |
275.56K /
11 Page |
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it Online |
Download Datasheet |
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ICSI
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| Part No. |
IC42S16102
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| OCR Text |
...ly the be st possible product. we assume no responsibility for any errors which may appear in this publication. ? copyright 2000, integrat...pf c in 2 input capacitance: (clk, cke, cs , ras , cas , we , ldqm, udqm) ? 4 pf ci/o data input... |
| Description |
DYNAMIC RAM, SDRAM
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| File Size |
769.36K /
78 Page |
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it Online |
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ISSI
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| Part No. |
IS63WV1024BLL
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| OCR Text |
...onal block diagram a0-a16 ce oe we 128k x 8 memory array decoder column i/o control circuit gnd vdd i/o data circuit i/o0-i/o7 may 2006 dat...pf c out input/output capacitance v out = 0v 8 pf note: 1. tested initially and after any design or... |
| Description |
(IS63WV1024BLL / IS64WV1024BLL) 128K x 8 HIGH-SPEED CMOS STATIC RAM
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| File Size |
379.08K /
17 Page |
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it Online |
Download Datasheet |
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